A constant energy relaxation time (
), or a quadratic dependence on
the electron temperature [183,184], are usually assumed. A precise
simulation needs to include the dependence of
on the lattice and
An empirical model for the electron energy relaxation time has been suggested in . It is based on Monte-Carlo simulation results , and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys of the material composition. The influence of doping concentration is not taken into account.