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6.1.3.2 Inclusion of Monte Carlo Simulations
Beside analytical functions used for the approximation of particle
distributions impinging on the wafer, it is also possible to include flux
distributions resulting from threedimensional Monte Carlo particle transport
simulation as described in [69]. These simulations account for
experimentally measured target erosion profiles and calculate particle
collisions according the the prevailing process pressure and temperature.
Figure 6.6:
Polar plot of particle distributions resulting from Monte Carlo particle
transport simulation. The left hand side shows a distribution with an average
incidence direction of
= for a center wafer position,
for the offcenter position on the right hand side
= .

Fig. 6.6 shows two polar plots of particle distributions resulting from fully
threedimensional Monte Carlo particle transport simulations. The left hand side
depicts a distribution with an average incidence direction of
=
1.01 for a center wafer position, for the offcenter position on the
right hand side
= 5.12. This means that the average
direction of the particles is slightly shifted from the vertical direction
indicated in the plot by the sold line.
This concludes the considerations about the particle distributions. The next
step towards the final profile evolution is the deduction of the local surface
velocities from the particle distributions.
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Up: 6.1.3 Reactor Geometry and
Next: 6.1.4 Rate Calculation
W. Pyka: Feature Scale Modeling for Etching and
Deposition Processes in Semiconductor Manufacturing