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Next: 5.4.5 Technology E: InP Based Up: 5.4 Technologies Under Investigation Previous: 5.4.3 Technology C: Pseudomorphic HEMT

5.4.4 Technology D: Pseudomorphic high-power HEMT on GaAs

Technology D is derived from Technology C introducing an additional mask layer which allows to process a double recess structure, either symmetrical or non symmetrical to the T-shaped gate. Typical gate lengths are $ {\it l}_{\mathrm{g}}$= 150 nm to 500 nm.