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Next: 5.4.6 Technology F: Metamorphic Depletion Up: 5.4 Technologies Under Investigation Previous: 5.4.4 Technology D: Pseudomorphic high-power

5.4.5 Technology E: InP Based InAlAs/InGaAs Depletion Type HEMT

The examples for a depletion type InP are taken from an experimental process on 2 inch InP substrates. By means of a wet etch process and electron beam lithography the gate of $ {\it l}_{\mathrm{g}}$= 150 nm is defined.