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Next: 7.3.1 Understanding the Output Up: 7. Simulation Studies Previous: 7.2.6 and Related Quantities

7.3 Technology B: Pseudomorphic HEMT on GaAs in Ka-Band and Q-Band

For high-power amplifiers in the Ka-band (26.5-40 GHz) and Q-band (33-50 GHz) the AlGaAs/ InGaAs/GaAs HEMT is the most promising device with respect to high gain and output power. A careful optimization process is necessary with respect to both, gain and power requirements considering statistical process variations. Fig 7.20 shows the simulated and measured output characteristics of a $ {\it l}_{\mathrm{g}}$= 210 nm pseudomorphic HEMT.

Figure 7.20: Output characteristics of pseudomorphic power HEMT.

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