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2.2 Oxidation

Thermal oxidation is the process of silicon dioxide (SiO2) extraction from pure silicon (Si) as a result of a chemical reaction of silicon and oxygen (O2). There can be distinguished between two production techniques

Both have in common, that the grown oxide consumes the necessary silicon from the wafer substrate itself, where the ratio between the thickness of consumed silicon to the thickness of the grown oxide is a factor of 0.44 (Fig. 2.2).

Figure 2.2: Oxide growth by thermal oxidation
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next up previous
Next: 2.2.1 The Deal & Up: 2. Physics of Diffusion Previous: 2.1.3 Segregation
Mustafa Radi
1998-12-11