2.1.2 Ion Implantation

After the surface has been structured implantation operations are carried out in order to manipulate the electronic properties of dedicated regions of the semiconductor wafer. Areas where mask material has previously been removed are doped by means of ion implantation. For time-critical simulations PROMIS-ANIMPL [27] as well as other simulation tools (TSUPREM [95], DIOS [37]) offer simple models based on analytical formulations of the implanted dopant distributions. In some areas analytical implantation models are not an option since they are not able to model effects such as crystal damage, channeling, or amorphization. Furthermore, the analytical models are likely to fail to model the implanted profiles accurately for rare combinations of implantation energy and dose.

PROMIS-MCIMPL [6,46] is a simulator based on first principles which models the implantation of a wide range of dopant species at high accuracy. However, this comes at the cost of a considerably increased computational effort. As a compromise between simulation time and accuracy, the PROMIS-MCIMPL can be used to create or, in other words, calibrate analytical implantation models. This can be especially beneficial during the course of extensive TCAD investigations where the simulation times of a Monte-Carlo implantation model are not acceptable.