8.1.2 Device Characterization

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8.1.2 Device Characterization

The electrical modeling of the devices is performed using MINIMOS-NT. Figure 8.4 shows the currents model which is used for this purpose (see also Example 8.2). It allows the specification of the drain and the gate potential at its input ports vd and vg, respectively. By specifying different values at these ports, the implementation of the currents model can be multiply used for the modeling of the drive current, the substrate current, and the leakage current.

$\begin{Figure} % latex2html id marker 7953\centering \includegraphics{fig/opt/... ... set of drain potential \textit{vd} and gate potential \textit{vg}.}\end{Figure}$

$\begin{Example} % latex2html id marker 7963\centering\small \begin{minipage}{\... ...ates the drain current and the substrate current of a MOS device.} \end{Example}$

Example 8.3 shows the input deck template which is used to control MINIMOS-NT within the simulation-flow-model shown in Example 8.2. Among other template symbols it includes symbols named vd, vg, and device which define the potential at the drain contact, the potential at the gate contact of the device, and the device description, respectively. The values of these symbols will be inserted into the input when SIESTA evaluates this model. Additionally, there are parameters named aux.repeatlevel, aux.type, and aux.initfile.

$\begin{Example} % latex2html id marker 8003\centering\small \begin{minipage}{0... ... and to increase robustness (\texttt{\dq{}mmnt-on-off.ipd\dq{}}).} \end{Example}$

Next: 8.1.2.1 Simulator Initialization Up: 8.1 An Optimization Scenario Previous: 8.1.1 Modeling the Fabrication

Rudi Strasser
1999-05-27