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In this Chapter an analytical approach for hot-carrier degradation modeling based on the rigorous physics-based TCAD model is developed. The model employs an analytical approximation of the carrier acceleration integral by a fitting formula. The essential features of hot-carrier degradation such as the interplay between single- and multiple-particle components of Si-H bond dissociation, mobility degradation during interface state build-up, as well as the saturation of degradation at long stress times are presented. As a result, the change of the linear drain current can be represented by the analytical expression over a wide range of stress conditions. The analytical model can be used to study the impact of device geometric parameters on hot-carrier degradation.