In recent years Indium Nitride (InN) has attracted much attention due to the considerable advancement in the growth of high quality crystals. Furthermore, several new works on the material properties proposed a bandgap of 0.7 eV ,, instead of 1.9 eV . Here a Monte Carlo approach is used to investigate the electron transport, considering two band structures ,. The calculations include the three lowest valleys of the conduction band (depending on the chosen band structure, see Table 3.4) and account for non-parabolicity effects. Several stochastic mechanisms such as acoustic phonon, polar optical phonon, inter-valley phonon, Coulomb, and piezoelectric scattering are considered and their impact is assessed . The parameter values for the acoustic deformation potential (ADP =7.1 eV), polar-optical phonon scattering ( =73 meV or 89 meV), inter-valley scattering ( = ), mass density (=6.81 g/cm), and static and high-frequency dielectric constants ( =15.3 and =8.4) are adopted from ,. In addition, the influence of another set of dielectric constants ( =11.0 and =6.7) recently proposed in  in conjunction with the narrow bandgap and lower effective mass is studied.
|Bandgap energy||Electron mass||Non-parabolicity||Scattering models||Ref.|
An accurate piezoelectric scattering model, which accounts for non-parabolicity and wurtzite crystal structure, is also employed . Table 3.5 summarizes experimental values for the elastic constants (, , and ) of wurtzite InN. From these the corresponding longitudinal and transversal elastic constants ( and ) and sound velocities ( and ) are calculated.
Table 3.6 gives theoretical values of the piezoelectric coefficients and available in the literature and the calculated corresponding and (= is assumed). Choosing the set of elastic constants from  and piezoelectric coefficients from  results in a coupling coefficient =0.24.