Contents

• List of Figures
• List of Tables
• 1. Introduction
• 2. State-of-the-Art
  • 2.1 History of HEMTs
  • 2.2 Applications for GaN HEMTs
    • 2.2.1 RF Applications: Broadband Communication
    • 2.2.2 RF Applications: Radar Components
    • 2.2.3 Automotive Applications
    • 2.2.4 Sensors
  • 2.3 Normally-Off HEMT
    • 2.3.1 Gate Recess and Surface Treatment
    • 2.3.2 Barrier and Capping Layers
  • 2.4 GaN-Based HEMTs
    • 2.4.1 Reports by Research Groups
    • 2.4.2 Commercially Available Products
  • 2.5 GaAs-Based HEMTs
  • 2.6 GaN-Based HBTs
    • 2.6.1 AlGaN/GaN HBTs
    • 2.6.2 InGaN/GaN HBTs
  • 2.7 Simulation Software
    • 2.7.1 Commercial Software
    • 2.7.2 Minimos-NT
  
  
• 3. Materials
  • 3.1 The Monte Carlo Method
  • 3.2 Gallium Nitride
    • 3.2.1 Material Properties
    • 3.2.2 Electron Transport
    • 3.2.3 Hole Transport
  • 3.3 Indium Nitride
    • 3.3.1 Material Properties
    • 3.3.2 Electron Transport
    • 3.3.3 Hole Transport
  • 3.4 Aluminum Nitride
  • 3.5 Ternary Alloys
  
  
• 4. Physical Models
  • 4.1 Semiconductor Equations
    • 4.1.1 Maxwell's Equations
    • 4.1.2 Poisson Equation
    • 4.1.3 Continuity Equations
    • 4.1.4 The Drift-Diffusion Transport Model
    • 4.1.5 The Hydrodynamic Transport Model
    • 4.1.6 The Lattice Heat Flow Equation
    • 4.1.7 Insulator Equations
    • 4.1.8 Boundary Conditions
  • 4.2 Lattice and Thermal Properties
    • 4.2.1 Permittivity
    • 4.2.2 Mass Density
    • 4.2.3 Thermal Conductivity
    • 4.2.4 Specific Heat
  • 4.3 Band Structure
    • 4.3.1 Band Gap Energy
    • 4.3.2 Band Gap Energy Offset
  • 4.4 Carrier Mobility
    • 4.4.1 Low-Field Mobility
    • 4.4.2 High-Field Mobility for DD Equations
    • 4.4.3 High-Field Mobility for HD Equations
    • 4.4.4 Energy Relaxation Times
  • 4.5 Spontaneous and Piezoelectric Polarization
  • 4.6 AC Simulation: Equivalent Circuits and Parameter Extraction
  
  
• 5. Simulation Studies
  • 5.1 Depletion-Mode HEMTs
    • 5.1.1 AlGaN/GaN Devices
    • 5.1.2 High Temperature Simulations
    • 5.1.3 Transconductance Study
    • 5.1.4 Optimization Techniques
    • 5.1.5 InAlN/GaN Devices
  • 5.2 Enhancement-Mode HEMTs
    • 5.2.1 Recessed Gate
    • 5.2.2 InGaN Cap
    • 5.2.3 Comparison Gate Recess versus InGaN Cap Layer
  
  
• 6. Conclusion and Outlook
• Bibliography
• Own Publications