5.1 Depletion-Mode HEMTs

A traditional HEMT structure is conductive at zero gate bias voltage, due to the polarization-induced charge at the barrier/channel interface. Consequently, D-mode transistors are well-studied and have been further developed for several years. The major part of the devices produced currently are therefore normally-off devices.


S. Vitanov: Simulation of High Electron Mobility Transistors