We are very proud to announce that all three CDL4ProMod submissions to this year’s SISPAD in Kobe, Japan, have been accepted. This year’s acceptance rate was below 50%, which is much lower than in the past years. The paper titles and authors are as follows:
- “Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures” from Tobias, Alexander, Andreas, and Lado
- “Molecular dynamics study of Al implantation in 4H-SiC” from Sabine, Robert, Andreas, and Lado
- “Physics-Informed Compact Model for SF6/O2 Plasma Etching” from Lado, Josip, Julius, and Tobias
Congratulations to everyone involved!