Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics
Matthias Kratzmann joined the SDS team as an undergraduate student. He is enrolled in the masther program of electrical engineering and information technology at the TU Wien, Austria. In the CDL for Single-Defect Spectroscopy he is currently working fast and high resolved measurement of device capacitance for defect characterization.
Welcome to our team, Matthias!
Konstantinos Tselios started on February 3rd as a doctoral student in the SDS team and will focus on on the characterization and modeling of charge trapping in low-noise silicon transistors. Konstantinos obtained the Diploma of Electrical and Computer Engineering from the University of Patras in 2018. Between 2018 and 2020, he studied at the Physics department of the National Technical University of Athens, where he received the Master’s degree in Microsystems and Nanodevices.
Welcome to our team, Konstantinos!
Silvia Antoneanu started on January 27th as an administrative assistant in the SDS team. Silvia held an administrative position at Lidl Romania and, since moving to Vienna, she has worked at the Library of the University of Natural Resources and Life Sciences (BOKU) and at Bank Austria, where she provided administrative support in data collection.
Welcome to our team, Silvia!
We’re proud to announce that our colleague, Bernhard won the Best Student Paper Award at IIRW 2019 (IEEE International Integrated Reliability Workshop) in Lake Tahoe for his paper “Statistical Characterization of BTI and RTN using pMOS Arrays”.
Congratulations Bernhard!
Alekandr Vasilev started on October 7th as a doctoral student in the SDS team and will focus on defect-centric modeling of reliability issues in SiC devices. Aleksandr obtained the Bachelor degree in Electronics and Nanoelectronics from Chuvash State University in 2011 and the Master degree in Solar Heterostructure Photovoltaics at Saint Petersburg Electrotechnical University “LETI” in Russia in 2013.
Welcome to our team, Aleksandr!
Our papers titled Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs and Parameter–Free Modeling of Hot–Carrier Degradation have been accepted at the 65th International Electron Devices Meeting (IEDM). The 1st work is co-authored by Christian, Tibor, Michael and our industrial partners from Global TCAD Solutions, KAI, Infineon and IMEC will be presented by Christian while the 2nd one which is a collaboration of Markus, Michael, Tibor and our colleagues from IMEC will be presented by Markus.
The event will take place in December 7-11, 2019 Hilton San Francisco and we wish our colleagues a successful IEDM 2019!
Our manuscripts titled Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects and Statistical Characterization of BTI and RTN using pMOS Arrays have been accepted at the International Integrated Reliability Workshop (IIRW).
The event will take place in October 13-17, 2019 Fallen Leaf Lake, CA, USA and we wish our colleagues, Dominic and Bernhard a successful IIRW 2019!
The SDS team continues to grow. Moritz Steinhauser joined the SDS team as an undergraduate student. He is enrolled in the bachelor program of electrical engineering and information technology at the TU Wien, Austria. In the CDL for Single-Defect Spectroscopy he is currently working on characterization of the impact of magnetic fields on single defects.
Welcome to our team, Moritz!
The SDS team continues to grow. Matthias Seidl joined the SDS team as an undergraduate student. He is enrolled in the bachelor program of electrical engineering and information technology at the TU Wien, Austria. In the CDL for Single-Defect Spectroscopy he is working on advanced characterization of charge trapping in SiC MOSFETs.
Welcome to our team, Matthias!
On April, 5th our team member Markus Kampl defended his PhD thesis “Investigating Hot-Carrier Effects using the Backward Monte Carlo Method” with distinction. Markus’ has decided to remain at the Institute for Microelectronics and in the SDS team as a post-doctoral researcher and his work will continue to focus on developing measurement tools and characterization of single defects in large-area transistors.
Special thanks go to the defense committee chaired by Prof. Dr. Erich Gornik, TU Wien, Austria, his supervisor Ao. Prof. Dr. Hans Kosina, TU Wien, Austria and the assessors and examiners: Ao. Prof. Dr. Gerhard Hobl, TU Wien, Austria and Prof. Antonio Garcia Loureiro, University of Santiago de Compostela, Spain.
Congratulations, Markus!