48.

Waltl, Michael; Hernandez, Yoanlys; Schleich, Christian; Waschneck, Katja; Stampfer, Bernhard; Reisinger, Hans; Grasser, Tibor

Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models Book Chapter

Dr. Jean François Michaud, Dr. Luong Viet Phung, Prof. Daniel Alquier; Prof. Dominique Planson (Ed.): pp. 8, 2022, ISBN: 9783035727609.

Links | BibTeX

47.

Waltl, Michael; Hernandez, Yoanlys; Schleich, Christian; Waschneck, Katja; Stampfer, Bernhard; Reisinger, Hans; Grasser, Tibor

Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models Journal Article

Materials Science Forum, 1062 , 2022.

Links | BibTeX

46.

Waltl, Michael; Knobloch, Theresia; Tselios, Konstantinos; Filipovic, Lado; Stampfer, Bernhard; Hernandez, Yoanlys; Waldhör, Dominic; Illarionov, Yury; Kaczer, Ben; Grasser, Tibor

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? Journal Article

Advanced Materials, pp. 23, 2022.

Links | BibTeX

45.

Barbara Waschiczek

Entwicklung eines Steuerungsmoduls mit Touchscreen für Messgeräte unter Einsatz der Grafikbibliothek LVGL Miscellaneous

2022, Bachelor's Thesis, TU Wien, Supervised by B. Stampfer, T. Grasser and M. Waltl.

BibTeX

44.

M. Waltl

Editorial for the Special Issue on Robust Microelectronic Devices Journal Article

Crystals, 12 , 2022.

Links | BibTeX

43.

Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl

Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part II: Experimental Journal Article

IEEE Transactions on Electron Devices, 68 (12), pp. 6, 2021.

Links | BibTeX

42.

Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser

Efficient Modeling of Charge Trapping at Cryogenic Temperatures—Part I: Theory Journal Article

IEEE Transactions on Electron Devices, 68 (12), pp. 6, 2021.

Links | BibTeX

41.

M. Waltl, D. Waldhoer, K. Tselios, B. Stampfer, C. Schleich, G. Rzepa, H. Enichlmair, E. G. Ioannidis, R. Minixhofer; T. Grasser

Impact of single-defects on the variability of CMOS inverter circuits Journal Article

Microelectronics Reliability, 126 (6), 2021.

Links | BibTeX

40.

Matthias Kratzmann

Development of a Low-Noise CV Measurement Module for Defect-Spectroscopy of MOS Transistors Masters Thesis

2021, Supervised by M. Waltl and T. Grasser.

BibTeX

39.

Tobias Zinsler

Analyse von Stufenhöhen in der Schwellspannung bei SiON n-MOSFETs mit Hilfe des Python-TDDS Programms Miscellaneous

2021, Bachelor's Thesis, TU Wien, Supervised by T. Knobloch, K. Tselios, T. Grasser and M. Waltl.

BibTeX

38.

C. Schleich, D. Waldhör, K. Waschneck, M. Feil, H. Reisinger, T. Grasser, M. Waltl

Physical Modeling of Charge Trapping in 4H-SiC DMOSFET Technologies Journal Article

IEEE Transactions on Electron Devices, 68 (8), pp. 7, 2021.

Links | BibTeX

37.

D. Waldhör, C. Schleich, J. Michl, B. Stampfer, K. Tselios, E. Ioannidis, H. Enichlmair, M. Waltl, T. Grasser

Toward Automated Defect Extraction From Bias Temperature Instability Measurements Journal Article

IEEE Transactions on Electron Devices, 68 (8), pp. 7, 2021.

Links | BibTeX

36.

M. Kampl, H. Kosina, M. Waltl

Improved Sampling Algorithms for Monte Carlo Device Simulation Conference

International Workshop on Computational Nanotechnology (IWCN), 2021.

Links | BibTeX

35.

K. Tselios, D. Waldhör, B. Stampfer, J. Michl, E. G. Ioannidis, H. Enichlmair, T. Grasser; M. Waltl

On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors Journal Article

IEEE Transactions on Device and Materials Reliability, 21 (2), pp. 199-206, 2021.

Links | BibTeX

34.

Moritz Steinhauser

Einfluss des Magnetfeldes auf das Trappingverhalten von Einzeldefekten in Feldeffekttransistoren Miscellaneous

2021, Bachelor's Thesis, TU Wien, Supervised by C. Schleich, M. Waltl and T. Grasser.

BibTeX

33.

Johannes Wiesböck

Signalgenerator für Defektspektroskopie in Halbleitertransistoren Miscellaneous

2021, Bachelor's Thesis, TU Wien, Supervised by M. Waltl and T. Grasser.

BibTeX

32.

A. P. Shah; M.Waltl

Impact of negative bias temperature instability on single event transients in scaled logic circuits Journal Article

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2020.

Links | BibTeX

31.

M. Jech, G. Rott, H. Reisinger, S. Tyaginov, G. Rzepa, A. Grill, D. Jabs, C. Jungemann, M. Waltl; T. Grasser

Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full VG, VD Bias Space: Implications and Peculiarities Journal Article

IEEE Transaction on Electron Devices, 67 (8), pp. 33115-3322, 2020.

Links | BibTeX

30.

M. Feil, A. Huerner, K. Puschkarsky, C. Schleich, T. Aichinger, W. Gustin, H. Reisinger, T. Grasser

The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters Journal Article

Crystals, 10 , pp. 1143-1 - 1143-14, 2020.

Links | BibTeX

29.

B. Stampfer

Advanced Electrical Characterization of Charge Trapping in MOS Transistors PhD Thesis

2020, PhD Thesis, TU Wien, Supervised by T. Grasser.

BibTeX

28.

M. Waltl, B. Stampfer, G. Rzepa, B. Kaczer, T. Grasser

Separation of electron and hole trapping components of PBTI in SiON nMOS transistors Journal Article

Microelectronics Reliability, 114 , 2020.

Links | BibTeX

27.

Waltl M.

Spectroscopy of Single Defects in Semiconductor Transistors Conference

International Conference on Materials Science and Engineering , 2020.

Links | BibTeX

26.

K. Tselios, B. Stampfer, J. Michl, E. Ioannidis, H. Enichlmair, M. Waltl

Distribution of Step Heights of Electron and Hole Traps in SiON nMOS Transistors Conference

2020 IEEE International Integrated Reliability Workshop (IIRW) , 2020.

Links | BibTeX

25.

Vasilev A., Jech M., Grill A., Rzepa G., Schleich C., Makarov A., Pobegen G., Grasser T., Waltl M., Tyaginov S.

Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors Conference

2020 IEEE International Integrated Reliability Workshop (IIRW), 2020.

Links | BibTeX

24.

Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M.

Extraction of Statistical Gate Oxide Parameters From Large MOSFET Arrays Journal Article

IEEE Transactions on Device and Materials Reliability, 20 (2), pp. 6, 2020.

Links | BibTeX

23.

Waltl M.

Reliability of Miniaturized Transistors from the Perspective of Single-Defects Journal Article

Micromachines, 11 (8), pp. 21, 2020.

Links | BibTeX

22.

A. Grill, E. Bury, J. Michl, S. Tyaginov, D. Linten, T. Grasser, B. Parvais, B. Kaczer, M. Waltl, I. Radu

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures Conference

IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6.

Links | BibTeX

21.

Bernhard Ruch; Gregor Pobegen; Christian Schleich; Tibor Grasser

Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping Conference

2020 IEEE International Reliability Physics Symposium (IRPS) , 2020, ISBN: 978-1-7281-3200-6.

Links | BibTeX

20.

J. Michl, A. Grill, D. Claes, G. Rzepa, B. Kaczer, D. Linten, I. Radu, T. Grasser, M. Waltl

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures Conference

IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6.

Links | BibTeX

19.

J. Berens; M. Weger; G. Pobegen; T. Aichinger; G. Rescher; C. Schleich; T. Grasser

Similarities and Differences of BTI in SiC and Si Power MOSFETs Conference

2020 IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020, ISBN: 978-1-7281-3200-6.

Links | BibTeX

18.

Waltl M.

Defect Spectroscopy in SiC Devices Conference

2020 IEEE International Reliability Physics Symposium (IRPS), IEEE, 2020.

Links | BibTeX

17.

D. Waldhoer, A.-M. El-Sayed, Y. Wimmer, M. Waltl, T. Grasser

Atomistic Modeling of Oxide Defects Book Chapter

T. Grasser (Ed.): pp. 40, Springer, 2020, ISBN: 978-3-030-37499-0.

Links | BibTeX

16.

B. Stampfer, A. Grill, M. Waltl

Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals Book Chapter

T. Grasser (Ed.): pp. 29, Springer, 2020, ISBN: 978-3-030-37499-0.

Links | BibTeX

15.

Grasser T., Kaczer B., O’Sullivan B., Rzepa G., Stampfer B., Waltl M.

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release Conference

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, ISBN: 978-1-7281-3199-3.

Links | BibTeX

14.

Waltl M.

Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS Transistors Journal Article

IEEE Transactions on Device and Materials Reliability, 20 (2), pp. 242-250, 2020.

Links | BibTeX

13.

Stampfer B., Schanovsky F., Grasser T., Waltl M.

Semi-Automated Extraction of the Distribution of Single Defects Journal Article

Micromachines, 11 (4), pp. 446, 2020.

Links | BibTeX

12.

M. Jech, S. Tyaginov, B. Kaczer, J. Franco, D. Jabs, C. Jungemann, M. Waltl, T. Grasser

First-Principles Parameter-Free Modeling of n- and p-FET Hot-Carrier Degradation Conference

Proceedings of the International Electron Devices Meeting (IEDM), 2019.

Links | BibTeX

11.

C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl

Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs Conference

Proceedings of the International Electron Devices Meeting (IEDM), 2019.

Links | BibTeX

10.

Stampfer B., Simicic M., Weckx P., Abbasi A., Kaczer B., Grasser T., Waltl M.

Statistical Characterization of BTI and RTN using Integrated pMOS Arrays Conference

2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019.

Links | BibTeX

9.

Waldhoer D., Wimmer Y., El-Sayed A. M., Goes W., Waltl M., Grasser T.

Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects Conference

2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019.

Links | BibTeX

8.

Scharlotta J., Bersuker G., Tyaginoy S., Young C., Haase G., Rzepa G., Waltl M., Chohan T., Iyer S., Kotov A., Zambelli C., Guarin F., Puglisi F. M., Ostermaier C.

IIRW 2019 Discussion Group II: Reliability for Aerospace Applications Conference

2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019.

Links | BibTeX

7.

Waltl M.

Characterization and Modeling of Single Charge Trapping in MOS Transistors Conference

2019 IEEE International Integrated Reliability Workshop (IIRW), IEEE, 2019.

Links | BibTeX

6.

D. Waldhoer, A.-M. El-Sayed, M. Waltl, T. Grasser

Ab-Initio Study on Defect-Strain Interaction in Amorphous Silica Workshop

ESCOMP Summer School, 2019.

BibTeX

5.

A. Grill, B. Stampfer, Ki-Sik Im, J.-H.Lee, C.Ostermaier, H.Ceric, M.Waltl, T.Grasser

Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs Journal Article

Solid-State Electronics, 156 , pp. 41-47, 2019.

Links | BibTeX

4.

Bianka Ullmann, Katja Puschkarsky, Michael Waltl, Hans Reisinger and Tibor Grasser

Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques Journal Article

IEEE Transactions of Device and Materials Reliability, 19 (2), pp. 358-362, 2019.

Links | BibTeX

3.

Matthias Kratzmann

Temperaturkontroller für die Defektspektroskopie in Halbleitertransistoren Miscellaneous

Bachelor's Thesis, TU Wien, 2019, Supervised by M. Waltl and T. Grasser.

BibTeX

2.

Christian Schleich

Characterization and Modelling of SiC Transistors Masters Thesis

2019, Supervised by M. Waltl and T. Grasser.

BibTeX

1.

Martin Baumann

Stromnachführungsmodul für Defektspektroskopie in Halbleitertransistoren Miscellaneous

Bachelor's Thesis, TU Wien, 2019, Supervised by M. Waltl and T. Grasser.

BibTeX