Computer simulations in the area of technology computer-aided design (TCAD), required for enhancing future electronic devices and processes, are accelerated and improved by compute-efficient physical models to improve the time-to-market period. Together with Silvaco, Inc., efficient parallelization approaches for TCAD tools as well as novel mathematical models – to provide the means to predict cutting-edge devices – will be developed. The initial set of research problems will focus on issues regarding process simulations.
We are dealing with parallel algorithms for process TCAD, in particular particle transport involved in plasma etching, silicon oxidation, electroplating transport, and redistancing algorithms required for Level-Set topography simulations.
Additionally, we are investigating high performance, macroscopic models for the silicon carbide technology, such as oxidation, as well as for the field of epitaxy simulations, aimed at highly non-planar structures.