Publications

44.

A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub

Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 336-339, 2018, ISBN: 978-1-5386-6788-0.

Links | BibTeX | Tags: Annealing, Electrical Activation, gallium nitride, modeling, power devices

43.

J. Weinbub, M. Ballicchia, M. Nedjalkov

Electron Interference in a Double-Dopant Potential Structure Inproceedings

Abstracts Workshop on Innovative Devices and Systems (WINDS), 2018, ISBN: 978-3-901578-32-8, 52 - 53.

Links | BibTeX | Tags: dopant activation, Electron Interface

42.

L. Gnam, P. Manstetten, A. Hössinger, S. Selberherr, J. Weinbub

Accelerating Flux Calculations Using Sparse Sampling Journal Article

Micromachines, 9 , 2018.

Links | BibTeX | Tags: Etching Simulation, Flux Calculation, Process Simulation, topology simulation

41.

J. Weinbub, D.K. Ferry

Recent Advances in Wigner Function Approaches Journal Article

Applied Physics Reviews , (5), 2018.

Links | BibTeX | Tags: invited, Phase space methods, Quantum chemistry, Quantum computing, Quantum effects, Quantum electronics, Quantum information, Quantum mechanical systems and processes, Quantum optics, Signal processing, Wigner, Wigner functions

40.

P. Manstetten

Performance Improvements For Advanced Physical Etching And Deposition In Memory Technologies Presentation

09.10.2018, (SURGE (Silvaco UseRs Global Event), Santa Clara, CA, USA - Invited ).

BibTeX | Tags: invited, memory technologies, Plasma Etching

39.

V. Simonka

Advancements In Annealing And Oxidation Steps For Compound Semiconductor Power Devices Presentation

09.10.2018, (SURGE (Silvaco UseRs Global Event), Santa Clara, CA, USA - Invited).

BibTeX | Tags: Annealing, Oxidation, power devices

38.

L. Gnam, S. Selberherr, J. Weinbub

Evaluation of Serial and Parallel Shared-Memory Distance-1 Graph Coloring Algorithms Inproceedings

L. Gnam (Ed.): Book of Abstracts of the Ninth International Conference on Numerical Methods and Applications (NM&A'18), 2018.

Links | BibTeX | Tags: Parallel Algorithm

37.

V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub

Investigation of Post-Implantation Annealing for Phosphorus-Implanted 4H-Silicon Carbide Inproceedings

Proceedings of the International Conference on Microelectronic Devices and Technologies (MicDAT), pp. 42-44, International Frequency Sensor Association (IFSA) Publishing, S.L., Barcelona, Spain, 2018.

Links | BibTeX | Tags: Annealing, implantation, modeling, phosphorus, silicon carbide, transient

36.

V. Simonka, A. Toifl, A. Hössinger, S. Selberherr, J. Weinbub

Transient Model for Electrical Activation of Aluminium and Phosphorus-Implanted Silicon Carbide Journal Article

Journal of Applied Physics, 123 (23), 2018.

Links | BibTeX | Tags: Annealing, carbides, dopping

35.

P. Manstetten; L. Gnam; A. Hössinger; S. Selberherr; J. Weinbub

Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme Incollection

Lecture Notes in Computer Science, ICCS 2018 , pp. 694-707, Springer, 2018, ISBN: 978-3-319-93698-7.

Links | BibTeX | Tags: HPC, topography simulation

34.

G. Diamantopoulos, A. Hössinger, S. Selberherr, J. Weinbub

A Shared-Memory Parallel Multi-Mesh Fast Marching Method for Full and Narrow Band Re-Distancing Inproceedings

Talk: European Seminar on Computing (ESCO), pp. 1, Proc. 6th European Seminar on Computing, Pilsen, Czech Republic, 2018.

Links | BibTeX | Tags: Parallel Algorithm

33.

L. Gnam, P. Manstetten, S. Selberherr, J. Weinbub

Comparison of High-Performance Graph Coloring Algorithms Inproceedings

Vienna Young Scientists Symposium, 2018, ISBN: 978-3-9504017-8-3, 30 - 31.

Links | BibTeX | Tags: Parallel Algorithm, Trigate

32.

V. Šimonka; A. Hössinger; J. Weinbub; S. Selberherr

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Journal Article

Materials Science Forum, 924 , pp. 192-195, 2018.

Links | BibTeX | Tags: dopant activation, Materials Science Forum, SiC

31.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide Journal Article

IEEE Transactions on Electron Devices, 65 (2), pp. 674 - 679, 2018.

Links | BibTeX | Tags: Electrical Activation, SiC

30.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation Journal Article

Journal of Physical Chemistry A, 121 (46), pp. 8791 - 8798, 2017.

Links | BibTeX | Tags: Molecular Dynamics, Oxidation, ReaxFF, SiC

29.

Lukas Gnam; Josef Weinbub; Karl Rupp; Florian Rudolf; Siegfried Selberherr

Using Graph Partitioning and Coloring for Flexible Coarse-Grained Shared-Memory Parallel Mesh Adaptation Inproceedings

Proceedings of the International Meshing Roundtable (IMR), pp. 5, 2017.

Links | BibTeX | Tags: HPC, IMR, Meshing, Parallel Algorithm

28.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide Inproceedings

Book of Abstracts of the International Conference on Silicon Carbide and Related Materials (ICSCRM), 2017.

Links | BibTeX | Tags: Annealing, ICSCRM, Poster, SiC, thermal activation

27.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 125 - 128, 2017, ISBN: 978-4-86348-612-6.

Links | BibTeX | Tags: Electrical Activation, SiC, SISPAD, Talk

26.

Paul Manstetten; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Accelerated Direct Flux Calculations Using an Adaptively Refined Icosahedron Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 73 - 76, 2017, ISBN: 978-4-86348-612-6.

Links | BibTeX | Tags: Flux Calculation, SISPAD, Talk

25.

Georgios Diamantopoulos; Josef Weinbub; Andreas Hössinger; Siegfried Selberherr

Evaluation of the Shared-Memory Parallel Fast Marching Method for Re-Distancing Problems Inproceedings

Proceedings of the International Conference on Computational Science and Its Applications (ICCSA), pp. 8, 2017, ISBN: 978-1-5386-3893-4.

Links | BibTeX | Tags: FMM, HPC, Talk

24.

Paul Manstetten; Josef Weinbub; Andreas Hössinger; Siegfried Selberherr

Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces Journal Article

Procedia Computer Science, 128 , pp. 245 - 254, 2017.

Links | BibTeX | Tags: Flux Calculation, ICCS, Mesh, Plasma Etching, Talk, Visibility

23.

Lukas Gnam; Josef Weinbub; Andreas Hössinger; Siegfried Selberherr

Towards a Metric for an Automatic Hull Mesh Coarsening Strategy Inproceedings

Proceedings of the Vienna Young Scientists Symposium (VSS), pp. 118-119, 2017, ISBN: 978-3-9504017-5-2.

Links | BibTeX | Tags: Hull Mesh, Talk, VSS

22.

Paul Manstetten; Vito Šimonka; Georgios Diamantopoulos; Lukas Gnam; Alexander Makarov; Andreas Hössinger; Josef Weinbub

Computational and Numerical Challenges in Semiconductor Process Simulation Inproceedings

Book of Abstracts of the Minisymposium on Computational and Numerical Methods in Electronics, SIAM Computational Science and Engineering (CSE), pp. 1, 2017.

Links | BibTeX | Tags: SIAM CSE, Talk

21.

Viktor Sverdlov; Josef Weinbub; Siegfried Selberherr

Modeling Spin-Dependent Phenomena for New Device Applications Inproceedings

Book of Abstracts of the Minisymposium on Computational and Numerical Methods in Electronics, SIAM Computational Science and Engineering (CSE), pp. 1, 2017, (invited).

Links | BibTeX | Tags: invited, SIAM CSE, Talk

20.

Paul Manstetten; Lado Filipovic; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures Using One-Dimensional Radiosity Journal Article

Solid-State Electronics, 128 , pp. 141-147, 2017, (invited).

Links | BibTeX | Tags: High Aspect Ratio, invited, Neutral Particle Flux, Plasma Etching, Radiosity, Solid-State Electronics

19.

Vito Šimonka; Georg Nawratil; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation Journal Article

Solid-State Electronics, 128 , pp. 135-140, 2017, (invited).

Links | BibTeX | Tags: Growth Rate, invited, Oxidation, SiC, Solid-State Electronics

18.

Vito Šimonka

Natancni Fizikalni Modeli 3D Simulatorjev Proizvodnje Mikroelektronskih Naprav Presentation

26.01.2017, (Faculty of Natural Sciences and Mathematics, University of Maribor, Slovenia; invited).

BibTeX | Tags: invited, SiC, Talk

17.

Dominik Koukola

Using Instancing to Model Boundary Conditions for Direct Flux in 3D High Performance TCAD Simulations Miscellaneous

Bachelor's Thesis, TU Wien, 2016.

BibTeX | Tags: Bachelor's Thesis, Plasma Etching

16.

Paul Ellinghaus; Mihail Nedjalkov; Josef Weinbub; Siegfried Selberherr

Wigner Modelling of Quantum Wires Inproceedings

Abstracts Workshop on Innovative Devices and Systems (WINDS), pp. 2, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

15.

Matthias Franz Glanz

Parallelization Strategies for Particle Monte Carlo Simulations Miscellaneous

Bachelor's Thesis, TU Wien, 2016.

BibTeX | Tags: Bachelor's Thesis, Wigner

14.

Mihail Nedjalkov; Josef Weinbub; Siegfried Selberherr

Modeling Carrier Transport in Nanoscale Semiconductor Devices Inproceedings

Abstracts of the BIT’s Annual World Congress of Nano Science & Technology (Nano S&T), pp. 377, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

13.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Growth Rates of Dry Thermal Oxidation of 4H-Silicon Carbide Journal Article

Journal of Applied Physics, 120 (13), pp. 135705-1–135705-8, 2016.

Links | BibTeX | Tags: Growth Rate, Journal of Applied Physics, Oxidation, SiC

12.

Mihail Nedjalkov; Josef Weinbub; Ivan Dimov; Siegfried Selberherr

Signed Particle Interpretation for Wigner-Quantum Electron Evolution Inproceedings

Abstracts of the Third National Congress of Physical Sciences, pp. 1, 2016, (invited).

Links | BibTeX | Tags: invited, Talk, Wigner

11.

Josef Weinbub; Andreas Hössinger

Shared-Memory Parallelization of the Fast Marching Method Using an Overlapping Domain-Decomposition Approach Inproceedings

Proceedings of the 24th High Performance Computing Symposium, pp. 18:1-18:8, 2016, ISBN: 978-1-5108-2318-1.

Links | BibTeX | Tags: FMM, HPC, HPC Symposium, Parallel Algorithm, Redistancing, Talk

10.

Paul Manstetten; Lado Filipovic; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 265 - 268, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Poster, SISPAD

9.

Vito Šimonka; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation Inproceedings

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 233 - 236, 2016, ISBN: 978-1-5090-0817-9.

Links | BibTeX | Tags: Growth Rate, Oxidation, Poster, SiC, SISPAD

8.

Josef Weinbub; Andreas Hössinger

Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-Ordered Fast Iterative Method Journal Article

Procedia Computer Science, 80 , pp. 2271-2275, 2016.

Links | BibTeX | Tags: FIM, FMM, ICCS, Parallel Algorithm, Poster, Redistancing, SOFI

7.

Mihail Nedjalkov; Josef Weinbub; Siegfried Selberherr

The Description of Carrier Transport for Quantum Systems Inproceedings

Book of Abstracts of the Energy Materials Nanotechnology Meeting on Quantum, pp. 41-42, 2016, (invited).

Links | BibTeX | Tags: EMN, invited, Wigner

6.

Paul Manstetten; Lado Filipovic; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Using One-Dimensional Radiosity to Model Neutral Particle Flux in High Aspect Ratio Holes Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 120-123, 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity

5.

Vito Šimonka; Georg Nawratil; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Direction Dependent Three-Dimensional Silicon Carbide Oxidation Growth Rate Calculations Incollection

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) , pp. 226-229 , 2016.

Links | BibTeX | Tags: EUROSOI-ULIS, Oxidation, SiC

4.

Andreas Morhammer; Karl Rupp; Florian Rudolf; Josef Weinbub

Optimized Sparse Matrix-Matrix Multiplication for Multi-Core CPUs, GPUs, and MICs Inproceedings

Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC), pp. 23, 2016.

Links | BibTeX | Tags: AHPC, HPC

3.

Karl Rupp; Josef Weinbub

A Computational Scientist's Perspective on Current and Future Hardware Architectures Inproceedings

Book of Abstracts of the 2016 Austrian HPC Meeting (AHPC), pp. 24, 2016.

Links | BibTeX | Tags: AHPC, HPC

2.

Paul Manstetten; Lado Filipovic; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Modeling Neutral Particle Flux in High Aspect Ratio Holes Using a One-Dimensional Radiosity Approach Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 68-69, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, High Aspect Ratio, Neutral Particle Flux, Plasma Etching, Radiosity, Talk

1.

Vito Šimonka; Georg Nawratil; Andreas Hössinger; Josef Weinbub; Siegfried Selberherr

Geometrical Aspects of Three-Dimensional Silicon Carbide Oxidation Growth Rate Modeling Inproceedings

Proceedings of the 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 128-129, 2016, ISBN: 978-3-901578-29-8.

Links | BibTeX | Tags: EUROSOI-ULIS, Growth Rate, Oxidation, Poster, SiC