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3. Simulation - Theory and Modeling

There are various methods for the simulation of ion implantation, on the one hand side empirical methods like the analytical method or the point response interface method and on the other hand side more physically based methods like the Monte-Carlo method or the molecular dynamics method. This work mainly deals with the Monte-Carlo method, but also a short introduction to the other methods is given in the following.



Subsections previous up next contents Previous: 2.3.3 Silicon Dioxide Up: Dissertation A. Hoessinger Next: 3.1 Analytical Method

A. Hoessiger: Simulation of Ion Implantation for ULSI Technology