4.3 Diffusion Model Library

  In this section we give details on the pre-defined diffusion models within PROMIS-NT. First, we describe the relatively simple models, where no point defect species are involved. More sophisticated models are described afterwards, which are even partially assembled from the simple ones.

As all of the following diffusion current models are using diffusivities, we first summarize available diffusion coefficients models. The diffusion coefficient D can modeled as follows:

    

(4.3-1) gives the diffusivity at intrinsic doping conditions, where (4.3-2) is appropriate to model the diffusion in silicon dioxide, based on a temperature dependent diffusivity. Equation (4.3-3) refers to the extrinsic dopant diffusion, where different charge states of dopants are encountered. The same diffusion coefficient is also taken for multiply charged dopant/defect pairs. If the dopant diffusion is driven by excess point defect concentrations, the diffusion coefficient is extended as depicted by (4.3-4), where and are weighting factors representing the interstitial and vacancy diffusion mechanism, respectively.

• 4.3.1 Coupled and Uncoupled Diffusion
  • Model Parameters
• 4.3.2 Clustering and Precipitation
  • Model Parameters
• 4.3.3 Transient Enhanced Diffusion
  • Model Parameters
  • Model Verification
• 4.3.4 Transient Dopant Activation
  • Model Parameters
  • Model Verification
• 4.3.5 Polysilicon Diffusion
  • Model Parameters
  • Model Verification