Dissertation Alireza Sheikholeslami

D I S S E R T A T I O N

Topography Simulation of
Deposition and Etching Processes

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien,
Fakultät für Elektrotechnik und Informationstechnik, von

ALIREZA SHEIKHOLESLAMI

Neilreichgasse 23/14-15
A-1100 Wien
Matrikelnummer 9825631
geboren am 17. September 1971 in Babol, Iran

Wien, im Septemebr 2006

Zusammenfassung
Abstract
Acknowledgment
Contents
List of Acronyms
List of Symbols
1. Introduction
- 1.1 History and Importance of Semiconductor Technology
- 1.2 Technology Computer Aided Design
- 1.3 Semiconductor Process Technology
- 1.4 Importance of Topography Simulation in Semiconductor Manufacturing
- 1.5 Outline of the Thesis
2. Mathematical Description of the Motion of Interfaces
- 2.1 Formulation of the Motion of Interfaces
- 2.2 An Overview of the Techniques for Tracking the Motion of a Surface
3. Topography Effects in Deposition and Etching
- 3.1 Common Aspects of Deposition and Etching
- 3.2 Minimizing the Corner Rounding
4. Simulation Models for Deposition of Silicon Dioxide Layers from TEOS
- 4.1 The Models
- 4.2 Summary
5. The General Purpose Topography Simulator ELSA
- 5.1 Simulation Flow of ELSA
- 5.2 Initialization
- 5.3 Transport of Particles
- 5.4 Extending the Speed Function
- 5.5 Fast Marching Method
- 5.6 Narrow Banding Technique
- 5.7 Combining Narrow Banding and Extension of the Speed Function
- 5.8 Coarsening Algorithm
- 5.9 Advancing the Level Set Function Using Finite Difference Schemes
- 5.10 Iterative Solver
- 5.11 Input File of Three-Dimensional ELSA
- 5.12 Fully Three-Dimensional Process Simulation
- 5.13 Stability of the Simulator
- 5.14 Summary
6. Application of ELSA to Interconnect Processes
- 6.1 Motivation
- 6.2 Feature-Scale Simulation
- 6.3 Backend Simulation
- 6.4 Simulation Results
- 6.5 Void Extraction Step
- 6.6 Optimizing the Voids for the Metal Profiles with Constant Line-to-Line Spacings
- 6.7 Summary
7. Application of ELSA to the Simulation of Plasma Etching
- 7.1 Calculation of Ion Flux
- 7.2 Etching Kinetics
- 7.3 Neutral-Ion Synergy Model
- 7.4 Etching Profile with Minimal Spurious Corner Rounding
- 7.5 Simulation Results
- 7.6 Summary
8. Applications of Three-Dimensional ELSA to Crack Prediction
- 8.1 Description of the Considered Deposition Processes Used by Investigations
- 8.2 Three-Dimensional Void Characteristics for the Prediction of Cracks
- 8.3 Summary
9. Application of ELSA to Mesh Generation
- 9.1 Motivation
- 9.2 The Semiconductor Equations
- 9.3 Main Steps of the Grid Generation
- 9.4 Construction of a Device Using the Level Set Method
- 9.5 Grid Generation for a TMOSFET
  - 9.5.1 Grid Generation
  - 9.5.2 Device Simulation
- 9.6 Grid Generation for an SOI Power Device
  - 9.6.1 Grid Generation
  - 9.6.2 Results and Discussion of Device Simulation
- 9.7 Summary
10. About Efficiency
11. Conclusion and Outlook
- Conclusion
- Outlook
Bibliography
Own Publications
Curriculum Vitae
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Next: Zusammenfassung

A. Sheikholeslami: Topography Simulation of Deposition and Etching Processes