Mesh generation is known to play a critical role in semiconductor device and process simulation. With the upcoming of three-dimensional simulations (e.g. Interconnect applications) the importance of three-dimensional mesh generation has significantly increased. Two-dimensional methods which have worked well in the past are often at their limits and more efficient algorithms have to be employed for the vast amount of data in three dimensions. The combination of efficient Delaunay methods with advancing front techniques is a fairly new development [6]. We present such an approach suitable for dealing with the increasing complexity of the device boundaries and interfaces as well as moving boundaries. Our algorithm also incorporates local improvement of non-delaunay quality measures by modifying the local arrangement of grid nodes, while still maintaining the Delaunay property.
The meshing algorithm consists of a Delaunay tetrahedrization and a non-planar Delaunay surface preprocessor. The tetrahedrization module uses a modified advancing front technique. It is provided with the initial front by the surface preprocessor. The following sections describe these topics and the process of local regridding respectively.