![\begin{figure}\begin{center}
\psfrag{2.8 \247m}[][cb][2]{{\footnotesize {2.8 \ma...
...twidth}{!}{\includegraphics{layout/metal1_stripped.eps}}\end{center}\end{figure}](img30.gif) |
x 2.8 x 3.2 structure
with two interconnect metal layers.
A first aluminium layer (dark blue) is isotropically deposited onto oxide
(green). The following resist layer (yellow) is patterned using information
from a layout file. This is accomplished by adding a specified number of
resist cells to the masked surface cells. The masking decision is made by a
layout library function which for a specified position returns one or zero,
depending on whether the point is inside or outside of a mask layer.
Standard layout file formats such as GDSII or CIF can be used.
After the unidirectional etch back of the metal, the resist is stripped and a
silicon dioxide isolation layer (gray) is isotropically deposited.
Next a second aluminium layer (light blue) is again isotropically deposited
and structured in the same way as the first aluminium layer.
As last step the two metal lines are encapsulated with a final silicon dioxide
layer.
With the original algorithm the computation time for the complete structure was 218 minutes, the isotropic deposition steps for the dioxide and metal layers took 210 minutes. With the new spherical segment algorithm the structure was simulated in 10 minutes, 2 minutes thereof were needed for the isotropic deposition steps.
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![\begin{figure}\begin{center}
\psfrag{2.8 \247m}[][cb][2]{{\footnotesize {2.8 \ma...
...45\textwidth}{!}{\includegraphics{layout/final.eps}}\par\end{center}\end{figure}](img31.gif)