dependence of the computing time on
deposition rate.
For a more accurate and even faster implementation of the linear structuring
element a combination of the cellular structure with additional triangle based
surface information might be successful.
The accelerated algorithms were successfully applied to the simulation of a wide variety of etching and deposition models such as isotropic deposition, uni-directional etching, lithography development simulation, sputter deposition and reactive ion etching.
With the accelerations gained the deposition routine itself can be neglected concerning the computational effort and the calculation of the visibility limits, as necessary for flux determined processes, becomes the critical time factor.
We have also shown fast geometry generation, extracted directly from the layout information by means of efficient mask generation and resist stripping models. By these means it is possible to generate three-dimensional models for interconnects, which can be directly re-used for electrical characterization of the resulting structures.
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