Publications

Advanced SOT-MRAM anisotropic-magnetoresistance Back-hopping FEM ferromagnetic trilayers field-free switching Finite Element Method interfacial spin-orbit coupling magnetic tunnel junctions MRAM noncollinear antiferromagnet perpendicular magnetic anisotropy Rashba-Edelstein effect reinforcement learning SOT SOT-MRAM Spin and Charge Drift-diffusion Spin drift-diffusion Spin Hall effect Spin transfer torque Spin Transfer Torques spin-orbit torque Spin-Transfer Torque spintronics STT-MRAM Temperature temperature modeling two-pulse switching ultra-scaled MRAM Ultra-Scaled MRAM Cells

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Viktor Sverdlov; Siegfried Selberherr

65 years of Transistor Scaling: What about the Future? Proceedings Article

In: Proceedings of the 16th Valiev International Conference MICRO- AND NANOELECTRONICS (ICMNE) 2025, pp. 4, 2025.

Links | BibTeX | Tags: 2D Materials, gate stacks, nanoscale transistors, spintronics