In order to study electromigration effects in modern copperbased interconnect layouts we have to deal with two types of models which are needed because of the different character of the physical phenomena taking place in the void prenucleating and void evolution phase.
We denote as the time needed for the void to nucleate and as the time which a nucleated void needs to grow from some initial nucleation size to the size which changes the interconnect resistivity to such an extent that it practically fails (for example ). So we can calculate the time to failure of the interconnect line,
(4.4) 
To extrapolate electromigration failure times measured under accelerated test conditions to operating conditions, a semiempirical model proposed by Black [75] has been widely used in which the time to failure is related to the temperature and the current density as

Interconnect reliability due to thermal effects is becoming a serious design issue particularly for dense packed interconnect structures. Thermal effects are inseparable aspects of electrical power distribution and signal transmission through the interconnects due to selfheating caused by the flow of current. Thermal expansion mismatch between the metal and the passivation layer causes stress which leads to fatigue and failure of the metalization [2]. The first problem to be modeled is selfheating due to an electrical current, which is described by the following equations [76],
In each electromigration model discussed below, the effect of electromigration is proportional to current density. Most of the available TCAD electromigration reliability tools [65,68] are exclusively based on current density simulation.
One of the well established results is that the current density exponent in Black's equation is caused by significant Joule selfheating at high current densities [7].
The temperature distribution defined by (4.6)(4.8) is used to set up the mechanical problem and the required equation for stress development due to thermal expansion is,
The strain tensor is connected to the local displacements through relations,
Replacing (4.9) and (4.10) into (4.11) one obtains an equation system for unknown local displacement functions .
Equations (4.6)(4.8) and (4.9)(4.11) model time dependently the evolution of stress in the interconnect structures. These equations are solved by means of the finite element method [76,11]. After determining local displacement functions , the stress tensor is calculated using relations (4.9) and (4.10).
Depending on the interconnect layout, electrothermal stresses can have tensile or compressive nature. High tensile stresses can cause breakup of the material and delopement of voids, on the other hand compressive stresses induce generation of extrusions.