There are two main types of depositions which have been examined in the literature and in Section 4.1. One type relies on the droplets being transported very near the surface, where they undergo evaporation and the resulting vapor causes a CVD-like deposition process on the silicon surface. The other type relies on the droplet reaching the surface before it is fully evaporated and sticking on the silicon wafer while simultaneously spreading. The former is commonly the result of a PSD deposition process, while the latter is common for ESD processes, where the droplets are accelerated at much higher speeds and therefore have enough force to overcome the retardant Stokes and thermophoretic forces to reach the substrate as a liquid.
The model for the deposition of a thin film using a PSD process, which acts as a CVD process is performed by following the flux from the nozzle and its expected trajectory as it reaches the wafer area. At this moment, at the substrate surface a CVD process is modeled, where the flux direction and sticking probability are the model parameters. The thickness of the deposited film depends on the amount of droplets reaching the surface, the deposition time, and the temperature used.