previous up next Dissertation Andreas Gehring contents
 Previous: 2.4.2.2 The Energy-Transport Model   Up: 2.4.2 Classical Device Simulation   Next: 2.4.3 Quantum Device Simulation

2.4.2.3 Device Simulation

In contrast to moment-based transport equations, the method solves BOLTZMANN's transport equation by statistical means. It has been used extensively for the simulation of semiconductor devices [55,56,57]. Full-band , which takes the correct shape of the band structure into account, is considered as the most rigorous method for the solution of BOLTZMANN's transport equation [58,59,60,61,62].


previous up next   contents
 Previous: 2.4.2.2 The Energy-Transport Model   Up: 2.4.2 Classical Device Simulation   Next: 2.4.3 Quantum Device Simulation
A. Gehring: Simulation of Tunneling in Semiconductor Devices