3.1.2 Other Techniques to Study Traps in Small MOSFETs



next up previous contents
Next: 3.1.3 Restrictions of Analytical Up: 3.1 Introduction Previous: 3.1.1 Charge-Pumping Techniques

3.1.2 Other Techniques to Study Traps in Small MOSFETs

 

The well established techniques to study the interface states are: the comparative low-frequency (quasi-static) and high-frequency (HF) - technique [48], the small-signal admittance (conductance and capacitance) techniques ([331]) and the deep-level transient spectroscopy techniques (DLTS) [264]. These methods are originally proposed for (and restricted to) large-area MOS capacitors. Due to large parasitic capacitances compared to the active capacitance and the very small signal produced, they cannot be applied to small MOSFETs. An exhaustive review of these techniques can be found in [331], comparative studies in e.g. [508][332], and some recent improvements of these methods and novel methods in e.g. [446][388][240][218][149][112][64][63].

Among the experiments to measure the charge-pumping current we note other techniques to study the interface states :



next up previous contents
Next: 3.1.3 Restrictions of Analytical Up: 3.1 Introduction Previous: 3.1.1 Charge-Pumping Techniques



Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994