Surface-Channel Versus Buried-Channel Devices



next up previous contents
Next: 2.1.1 Advanced Gate Design Up: 2.1 Dual Gate CMOS Previous: 2.1 Dual Gate CMOS

Surface-Channel Versus Buried-Channel Devices

Buried-channel devices exhibit a higher minority carrier low-field mobility than the surface-channel devices due to less surface scattering. Is seems that they show advantages over the surface-channel devices in the reliability issue [468][323][312]. The Buried-channel design has, however, some drawbacks comparing with the surface-channel design:

Note that -buried-channel MOSFETs exhibit less two-dimensional effects than their -buried-channel counterparts. Therefore -gate CMOS technology seems to be more scalable than CMOS technology [363].



next up previous contents
Next: 2.1.1 Advanced Gate Design Up: 2.1 Dual Gate CMOS Previous: 2.1 Dual Gate CMOS



Martin Stiftinger
Sat Oct 15 22:05:10 MET 1994