For the calculation of the implantation induced damage the modified Kinchin-Pease model and the Follow-Each-Recoil method are implemented. Both methods are combined with the appropriate recombination method. The species dependent parameters for the empirical recombination model are stored in common with the parameters of the electronic stopping model in a data file .
When the Follow-Each-Recoil method is applied the complete set of defect species as mentioned in Sec. 3.3.5 is not considered. Point defect clusters are neglected and all impurities are considered to remain at interstitial lattice positions after the implantation. Therefore just two types of defects, isolated interstitials and vacancies, have to be considered. A recombination model that just makes use of one species independent capturing radius for interstitials and vacancies with a default value of the size of the lattice constant as suggested in  is applied in combination with the Follow-Each-Recoil method.
The de-channeling effect is modeled as described in Sec. 3.3.5. An amorphization level of cm is used because it gives the best agreement between simulation results and measurements for implantations performed at room temperature. The interstitial atoms are placed as random interstitial sites as suggested in .
Besides using the default values all parameters of the empirical electronic stopping and damage models can be set by the command-line for calibration tasks.