5.1 Calibration of Trenches

This section focuses on the comparison of calibrated models for Tetra-ethoxy-silane (TEOS) $ {\mathrm{Si(C_2H_5O)_4}}$ deposition in a CVD process according to SEM images of $ \mathrm{SiO_2}$ layers (cf. Figure 5.1 [317]). In the first part, the level-set algorithm is briefly introduced followed by the description of the quality calculation of the simulation results and different models for deposition of $ \mathrm{SiO_2}$ layers for trenches with different aspect ratios. At the end of this section, the final parameter calibration for the best model is presented and discussed in detail.


Stefan Holzer 2007-11-19