Model Parameters

  The setup of the initial point defect profile plays a major role. It can be seen from SIMS measurements that no diffusion takes place in the tail region [Aro96]. Hence, we conclude that most of the point defects are generated during implantation near the surface. We used Monte Carlo ion implantation simulations to get the initial concentrations for the interstitial and vacancy profiles. The dopant concentration itself is calculated from a crystalline Monte Carlo calculation. We assume a certain fraction of the implanted dopants to be randomly paired ( ) or to be on substitutional lattice sites ( ). The values for the equilibrium point defect concentrations and as well as the point defect diffusivities are taken from [Tan85] [Bro87]. A summary of the parameters for the transient activation model is given in Table 4.3-3.

 

Recombination velocity 2.57eV

Pairing rate 7.96eV

Equil. Pairing Const. 13.2eV

Activation rate 15.7eV

Equil. Activation Const. 10.5eV

Initial pairs -

Initial substitutional Phos. -