Model Parameters

  For the initial model setup it is of major importance to know about the previous deposition and doping method, e.g. in-situ doped polysilicon exhibits different initial grain sizes and grain growth rates compared to ion implantation doped polysilicon. We use the PROMIS deposition module for the simulation of the polysilicon layer fabrication [Str95], which delivers information like polysilicon grain main axis orientation, deposition temperature, film thickness and doping technique. This information is used to initialize the grain size r as well as the orientation attribute of the grains according to Table 3.2-1.

The other modeling parameters are given in Table 4.3-4, where the grain growth parameter are taken from [Kal90]. All parameters are modeled by Arrhenius laws , if applicable. The clustering parameters are obtained from Table 4.3-1.

 

Trapping Factor t

Emission Factor e Max. Grain Boundary Area

Grain Boundary Thickness 5 nm

Grain Boundary Energy lat. 0.25 eV

Grain Boundary Energy vert. 0.25 eV

Stress Scaling Factor 150 MPa