DI S S E R T A T I O N

Selected Simulations of Semiconductor Structures

ausgeführt zum Zwecke der Erlangung des akademischen Grades
eines Doktors der technischen Wissenschaften

eingereicht an der Technischen Universität Wien
Fakultät für Elektrotechnik

von

Martin Rottinger

Franz Lehar Straße 23
A-3430 Tulln
Matr. Nr. 8726270
geboren am 15. Mai 1968 in Wels

Wien, im Mai 1999

``When you can measure what you are speaking about, and express it in numbers, you know something about it; but when you cannot measure it, when you can not express it in numbers, your knowledge is of meager and unsatisfactory kind: it may be the beginning of knowledge, but you have scarcely, in your thoughts, advanced to the stage of science.'' - Lord Kelvin

• Kurzfassung
• Abstract
• Acknowledgment
• List of Symbols
• List of Figures
• List of Tables
• 1. Introduction
• 2. Simulation of AVC Measurements
  • 2.1 The AVC Method
    • 2.1.1 The AVC Potential
    • 2.1.2 Approximation for the Space Charge Region
  • 2.2 Influence of the Surface on the Energy Shift
  • 2.3 The MINIMOS-NT AVC Models
  • 2.4 Simulation of an AVC Scan
  • 2.5 Examples
    • 2.5.1 Simulation of a p⁺n Diode
    • 2.5.2 Simulation of an n⁺p Diode
  • 2.6 Limits of the AVC Method
  • 2.7 Comparison to Other Doping Characterization Methods
• 3. Treatment of Interface Conditions
  • 3.1 Partitioning of the Simulation Domain
  • 3.2 Discretization at the Interface
  • 3.3 Implementation of Interface Models in MINIMOS-NT
  • 3.4 Transformations of the Equation System in MINIMOS-NT
  • 3.5 The New Method
    • 3.5.1 One-Dimensional Example
    • 3.5.2 Transformation for Two-Dimensional Discretization
  • 3.6 Application to a HEMT
  • 3.7 Conclusion
• 4. Two-Dimensional Transient Simulation of Charge-Coupled Devices
  • 4.1 Charge-Coupled Devices
  • 4.2 Transient Simulation
  • 4.3 Time Step Size Estimation
    • 4.3.1 Time Step Size Prediction
    • 4.3.2 Time Step Size Correction
    • 4.3.3 Interpolation of Sampled Input Signals
  • 4.4 Simulation of a Surface-Channel Charge-Coupled Device
• 5. Optimization of the On-Resistance of a VDMOS
  • 5.1 The Conventional Device
  • 5.2 Improved Designs
  • 5.3 Optimization
    • 5.3.1 Process Simulation
    • 5.3.2 The VISTA Simulation Flow Control
    • 5.3.3 Device Simulation
    • 5.3.4 Sensitivity Analysis
      • 5.3.4.1 Variation of the Epi-Layer Thickness
      • 5.3.4.2 Variation of the Vertical n-Doping Width
  • 5.4 Summary
• 6. Extraction of Compact Model Parameters
  • 6.1 The Simulated Device
  • 6.2 The Compact Model
  • 6.3 Simulation of the Device Characteristic with MINIMOS-NT
  • 6.4 Parameter Extraction
  • 6.5 Simulation of a Colpitts Oscillator
    • 6.5.1 Simulation Using MINIMOS-NT
    • 6.5.2 Simulation Using a Circuit Simulator
  • 6.6 Comparison of the Simulation Results
• 7. Summary and Outlook
• A. Carrier Interface Models in MINIMOS-NT
• B. The Akima Interpolation
• C. The Gummel-Poon BJT Model
• Bibliography
• Curriculum Vitae
• About this document ...