Michael Waltl | Single-Defect Spectroscopy in Semiconductor Devices
Christian Doppler Laboratory at the Institue for Microelectronics
The SDS team continues to grow. Peter Gubesch joined the SDS team as an undergraduate student. He is enrolled in the master program of microelectronics and photonics at the TU Wien and in the SDS his work will focus on designing a high-speed data acquisition unit with enhanced measurement resolution for defect spectroscopy measurements.
Welcome to our team, Peter!
On March, 22nd our team member Matthias Kratzmann defended his bachelor thesis “Temperaturkontroller für die Defektspektroskopie in Halbleitertransistoren” with distinction.
Special thanks go to the defense committee chaired by Prof. Dr. Ulrich Schmid, his supervisors Prof. Dr. Tibor Grasser and Dr. Michael Waltl.
Congratulations, Matthias!
Christian Schleich started on February 18th as a doctoral student in the SDS team and will focus on the characterization and modeling of defects in SiC MOS transistors. Christian studied electrical engineering at the TU Wien and defended his Master’s thesis on “Characterization and Modelling of SiC Transistors” (supervised by Michael) in January 2018.
Welcome to our team, Christian!
On January, 25th our team member Christian Schleich defended his master thesis “Characterization and Modeling of SiC Transistors” with distinction. Christian will continue in the SDS team as a PhD student starting with February 18th .
Special thanks go to the defense committee chaired by Prof. Dr. Ulrich Schmid, his supervisors Prof. Dr. Tibor Grasser and Dr. Michael Waltl and to the second examiner Prof. Dr. Emmerich Bertagnolli.
Congratulations, Christian!
On January 15th TU Wien hosted the opening ceremony of the Christian Doppler Laboratory for Single-Defect Spectroscopy. With a panoramic view over historic Vienna at TUtheSky, the director of the new research laboratory Michael Waltl warmly welcomed the representatives of the TU Wien rectorate, the president and members of the Christian Doppler Forschungsgesellschaft, managers and researchers of the industrial project partners, as well as colleagues and friends working at the TU Wien.
The aim of this research project is to significantly contribute to the development of novel transistors by studying the influence of single defects on their characteristics. For this purpose, silicon carbide transistors, which are used in high-power electronics and extremely low-noise silicon transistors for analog amplifier circuits, will be investigated in detail.
This project is a great cooperation of the Institute for Microelectronics with Austria’s leaders in the semiconductor industry ams AG and Infineon Technologies Austria AG as well as Global TCAD Solutions, a worldwide distributor of enhanced computer simulation software. The collaboration will be performed under the umbrella of the Christian Doppler Forschungsgesellschaft.
For more information please see the TU Wien Press Release.
