On January 15th TU Wien hosted the opening ceremony of the Christian Doppler Laboratory for Single-Defect Spectroscopy. With a panoramic view over historic Vienna at TUtheSky, the director of the new research laboratory Michael Waltl warmly welcomed the representatives of the TU Wien rectorate, the president and members of the Christian Doppler Forschungsgesellschaft, managers and researchers of the industrial project partners, as well as colleagues and friends working at the TU Wien.
The aim of this research project is to significantly contribute to the development of novel transistors by studying the influence of single defects on their characteristics. For this purpose, silicon carbide transistors, which are used in high-power electronics and extremely low-noise silicon transistors for analog amplifier circuits, will be investigated in detail.
This project is a great cooperation of the Institute for Microelectronics with Austria’s leaders in the semiconductor industry ams AG and Infineon Technologies Austria AG as well as Global TCAD Solutions, a worldwide distributor of enhanced computer simulation software. The collaboration will be performed under the umbrella of the Christian Doppler Forschungsgesellschaft.
For more information please see the TU Wien Press Release.
