Previous: 2.3.4 Summary of RESURF Technology Up: Dissertation Jong Mun Park Next: 3.1 Transport Physics Considered for Power Semiconductor Devices
The basic semiconductor physics involved in numerical device simulation of power semiconductor devices is discussed in this chapter. Furthermore, we present a discussion of device characteristics to be analyzed and optimized by numerical simulations. Some of the issues concerning power device operation and recently suggested super-junction concepts are also discussed.
and 
Transistors in Smart Power ICs
