Micromagnetic modeling of SOT-MRAM dynamics Journal Article
In: Physica B: Condensed Matter, vol. 676, pp. 415612, 2024, ISSN: 0921-4526.
Numerical Simulations of Spintronic Magnetoresistive Memories Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2023, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2023-10-26).
Numerical study of two-terminal SOT-MRAM Journal Article
In: Physica B: Condensed Matter, vol. 673, 2023.
Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices Proceedings Article
In: SISPAD 2023: International Conference on Simulation of Semiconductor Processes and Devices - Conference Abstract Booklet, pp. 357–360, 2023, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2023), Kobe, Japan; 2023-09-27 – 2023-09-29).
A Comprehensive Study of Temperature and Its Effects in SOT-MRAM Devices Journal Article
In: Micromachines, vol. 14, no. 8, pp. 1581, 2023.
Micromagnetic Modeling of SOT-MRAM Dynamics Proceedings Article
In: Book of Abstracts of the International Symposium on Hysteresis Modeling and Micromagnetics (HMM), pp. 1, 2023, (talk: International Symposium on Ħysteresis Modeling and Micromagnetics (ĦMM), Vienna, Austria; 2023-06-04 -- 2023-06-07).
Modeling Advanced Spintronic Based Magnetoresistive Memory Book Chapter
In: 2023, ISBN: 978-1-83953-786-8, (Proceedings of the International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE)).
Modeling Interfacial and Bulk Spin-Orbit torques Proceedings Article
In: Book of Abstracts of the International Conference on Nanostructured Materials (NANO), 2022, (talk: 16th International Conference on Nanostructured Materials, Sevilla, Spain; 2022-06-06 -- 2022-06-10).
Finite Element Modeling of Spin-Orbit Torques Proceedings Article
In: Book of Abstracts of the Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022, (poster: Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Udine, Italy; 2022-05-18 -- 2022-05-20).
Finite Element Modeling of Spin-Orbit Torque Book Section
In: Proceedings of the 2022 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2022.
Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAM Proceedings Article
In: Proceedings of the 14th International MOS-AK Workshop, pp. 1, 2021, (talk: International MOS-AK Workshop, Silicon Valley, USA; 2021-12-17).
Reinforcement Learning to Reduce Failures in SOT-MRAM Switching Proceedings Article
In: Proceedings of the IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2021, ISBN: 978-1-6654-3988-6, (talk: IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2021-09-15 -- 2021-10-15).
Enhancing SOT-MRAM Switching Using Machine Learning Proceedings Article
In: Proceedings of the Silvaco Users Global Event (SURGE), pp. 1, 2021, (invited; talk: Silvaco Users Global Event (SURGE), Santa Clara, CA, USA - virtual; 2021-10-14).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Journal Article
In: Microelectronics Reliability, vol. 126, pp. 114231-1–114231-5, 2021.
Advanced Modeling of Emerging MRAM: From Finite Element Methods to Machine Learning Approaches Proceedings Article
In: Proceedings of the International Conference Micro- and Nanoelectronics (ICMNE), 2021, ISBN: 978-5-317-06675-8, (invited; talk: International Conference Micro- and Nanoelectronics (ICMNE), Moscow-Zvenigorod, Russia; 2021-10-04 -- 2021-10-08).
Improving Failure Rates in Pulsed SOT-MRAM Switching by Reinforcement Learning Proceedings Article
In: Proceedings of the 32nd European Symposium on the Reliability of Electron Đevices, Failure Physics and Analysis, pp. 1–4, 2021, ISSN: 0026-2714, (talk: European Symposium on Reliability of Electron Đevices, Failure Physics and Analysis (ESREF), Bordeaux, France; 2021-10-04 -- 2021-10-07).
Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Proceedings Article
In: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2021, (talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Dallas, Texas (USA); 2021-09-27 -- 2021-09-29).
Deterministic Spin-Orbit Switching Scheme for an Array of Perpendicular MRAM Cells Suitable for Large Scale Integration Proceedings Article
In: Proceedings of the Trends in Magnetism Conference (TMAG), 2021, (talk: Trends in Magnetism (TMAG), Cefalù, Italy; 2021-09-06 -- 2021-09-10).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Proceedings Article
In: Proceedings of SPIE Spintronics, pp. 11805-53, 2021, (invited; talk: SPIE Spintronics, San Diego, CA, USA - virtual; 2021-08-01 -- 2021-08-05).
Reinforcement Learning Approach for Deterministic SOT-MRAM Switching Journal Article
In: Proceedings of SPIE, vol. 11805, pp. 1180519-1–1180519-8, 2021, (invited).
Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM Simulations Journal Article
In: Solid-State Electronics, vol. 185, pp. 108075, 2021, (invited).
Emerging CMOS Compatible Magnetic Memories and Logic Journal Article
In: IEEE Journal of the Electron Devices Society, vol. 9, pp. 456–463, 2021, (invited).
Emerging CMOS Compatible Magnetic Memories and Logic Proceedings Article
In: Proceedings of the IEEE Latin America Electron Devices Conference (LAEDC), 2020, ISBN: 978-1-7281-1044-8, (invited; talk: IEEE Latin America Electron Đevices Conference (LAEDC), San Jose, Costa Rica; 2020-02-25 -- 2020-02-28).
Robustness of the Two-Pulse Switching Scheme for SOT-MRAM Proceedings Article
In: Abstracts of the Workshop on Innovative Nanoscale Devices and Systems (WINDS), pp. 54–55, 2019, ISBN: 978-0-578-61722-0, (talk: Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kona, HI, USA; 2019-12-01 -- 2019-12-06).
Magnetic Field Free Switching of a Perpendicular SOT MRAM Cell Unpublished
2019, (invited; talk: LETI Innovation days: Advanced Simulation for Non-Volatile Memory Workshop, Grenoble, France; 2019-06-28).