List of Tables

2.1. Stacking sequences in the c-axis direction for different SiC polytypes.
2.2. Mechanical properties of SiC polytypes and other semiconductors.
2.3. Comparison of electrical properties of major SiC polytypes with Si.
2.4. Roadmap for SiC material.
3.1. Work function of selected metals and their measured and calculated barrier height on n-type 4H-SiC.
3.2. Temperature dependent measured exciton energy gap in $\alpha$ -SiC.
3.3. Electron and hole effective mass in $\alpha$ -SiC at 300K.
3.4. Calculated bandgap narrowing parameters in n- and p-type $\alpha$ -SiC.
3.5. Model parameters for low field mobility in 4H/6H-SiC.
3.6. Parameters of the electron saturation velocity in 4H- and 6H-SiC.
3.7. Model parameters for the heat capacity and the thermal conductivity in $\alpha$ -SiC.
3.8. Impact ionization coefficients of electrons and holes in 4H/6H-SiC.
3.9. Experimental values of the average ionization energy (in meV) level for Al, B, and N in 4H- and 6H-SiC.
4.1. Comparison of normalized figures of merit for $\alpha$ -SiC and Si.
4.2. Summary of optimized device parameters used for the simulation of a PiN diode.
4.3. Summary of optimized device parameters used for a simulation of MPS diode.
4.4. Summary of optimized device parameters used for the simulation of a UMOSFET.
4.5. Summary of optimized device parameters used for the simulation of a vertical DMOSFET.
4.6. Summary of optimized device parameters used for the simulation of an accumulation-mode lateral DMOSFET.
4.7. Optimized device parameters for a 4H-SiC MESFET.
4.8. Optimized small-signal circuit elements for 4H-SiC MESFET.
A.1. Summary of $\alpha$ -SiC model parameters.
A.2. Summary of additional $\alpha$ -SiC model parameters.
B.1. Best reported high-voltage SiC devices.
B.2. Best reported high-frequency devices.

T. Ayalew: SiC Semiconductor Devices Technology, Modeling, and Simulation


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