- 4.1. Resulting current density from the double grid discretization featuring distinct solution curves from the odd and the even grid points.
- 4.2. Unphysical oscillations in the equilibrium electron density.
- 4.3. Relative error (ratio) of the closure for bulk and for the nm device. Error from cumulant closure increases with high bias. Best fit for .
- 4.4. Comparison of the average velocity obtained from the SM and ET models with the self-consistent Monte Carlo simulation for the nm device.
- 4.5. Comparison of the kurtosis obtained from the SM and ET models with the self-consistent Monte Carlo simulation for the nm device.
- 4.6. Comparison of the device currents obtained from the SM and ET models with the self-consistent Monte Carlo simulation for varying channel length.
- 5.1. Conduction band edge of the RTD for different voltages. A linear voltage drop is assumed over a distance of 40 nm.
- 5.2. Influence of phonon scattering on the I/V characteristics of an RTD
- 7.1. The self-consistent potential entering the Schrödinger equation is obtained as a sum from the solution of the Poisson equation and the offset from the bandgap.
- 8.1. Wigner distribution function. Density is very low in large parts of the simulation domain.
- 9.1. Pair generation rate caused by the Wigner potential for two different voltages
- 9.2. The trajectory split algorithm: At each scattering event the weight of the trajectory is multiplied by 3 and a particle-antiparticle pair is generated.
- 10.1. I-V curve comparing Wigner and von Neumann simulation
- 10.2. Wigner simulation: Comparing ``naive'' and ``correct'' formula for current density at maximum bias
- 10.3. Comparing carrier density from Wigner and von Neumann simulation
- 10.4. Effect of the coherence length in Wigner simulations
- 10.5. Spikes in the transmitted current density resulting from sharp resonances

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R. Kosik: Numerical Challenges on the Road to NanoTCAD