3.4 Carrier Mobility

Carrier mobilities are influenced by several physical mechanisms, such as
scattering by interaction with thermal lattice vibrations, charged or neutral
impurities, lattice defects, and surfaces. For *alloy materials* also alloy
scattering mechanism has to be accounted for.

For Si the established mobility model of *MINIMOS 6* [43] is used. For a
more detailed discussion see [159,160]. The approach is extended for
all other semiconductor materials. The mobility models have to support both
the DD and the HD transport models. While the low-field mobility is independent
of the transport model used, the high-field mobility is modeled in a different
way. Thus, the various effects affecting the mobility are grouped into
low-field effects, including the impact of lattice scattering, ionized
impurities scattering, and surface scattering, and high-field effects,
respectively.

- 3.4.1 Lattice Mobility
- 3.4.2 Ionized Impurity Scattering
- 3.4.3 Surface scattering
- 3.4.4 High-Field Mobility for DD Equations
- 3.4.5 High-Field Mobility for HD Equations

2001-02-28