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5.3 Coupling with Lithography

In contrast to the benchmarks presented in the previous section, where the rate was given with mathematical expressions, lithography simulation is used in the following for the calculation of development rates of the photo-sensitive resist layer. The model used for the lithography simulation [32][33] is briefly summarized in Section 5.3.1.

For the coupling between lithography simulation and the model for the resist development each cell needs a numerical value for the development rate. Therefore the dissolution rate of the resist resulting from lithography simulation is transfered to the topography program and interpreted as etching rate which determines the radius of the structuring elements. Section 5.3.2 shows an application example for such an integrated exposure/development simulation.

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