5.2 Enhancement-Mode HEMTs

The possible approaches to obtain a normally-off device characteristics have been summarized in Section 2.3. Here, two of them are studied: the recessed gate approach and the InGaN cap layer approach. For the former experimental data from devices produced at the IAF Freiburg are available, while for the latter, the data were extracted from corresponding publications. The comparison is based on the same InGaN cap devices and experimental data provided in [49].


S. Vitanov: Simulation of High Electron Mobility Transistors