On December, 4th our colleague Bernhard Stampfer defended his PhD thesis “Advanced Electrical Characterization of Charge Trapping in MOS Transistors” with distinction. Bernhard has decided to remain at the Institute for Microelectronics and in the SDS team as a post-doctoral researcher and his work will continue to focus on characterization of defects in semiconductor devices.
Special thanks go to the defense committee chaired by Univ.Prof. Dr. Karl Unterrainer TU Wien, Austria, his supervisor Univ.Prof. Dr. Tibor Grasser TU Wien, Austria and the assessors and examiners: Dr. Montserrat Nafria Maqueda, Universitat Autonoma Barcelona Spain and Dr. Francesco Maria Puglisi, University of Modena and Reggio Emilia, Italy.
Congratulations, Bernhard!