Biography:
Yury Illarionov was born in Leningrad (now Saint-Petersburg) in 1988. He studied solid state physics at the Physical Science and Technology Faculty of St. Petersburg State Polytechnical University where he received the B.Sc. and M.Sc. degrees in 2009 and 2011, respectively. From 2010 to 2012 he studied advanced material science in Grenoble Institute of Technology (France) and University of Augsburg (Germany) in frameworks of Functionalized Advanced Materials and Engineering (FAME) Erasmus Mundus program and in September 2012 received a double European M.Sc. degree. His scientific carrier started in October 2007 in Ioffe Physical-Technical Institute (Russia) and in November 2011 he started to work on his doctoral degree there. He also visited IRCELYON (France, May-July 2011) and Singapore Institute of Manufacturing Technology (Singapore, February-July 2012) as a young guest researcher. His previous research was mainly focused on investigation of hot-electron-injection-related effects in tunnel MIS structures with high-k dielectrics. He joined the Institute for Microelectronics in February 2013, where his scientific interests include MOSFET reliability issues, in particular HCD and NBTI.