Papers in Conference Proceedings Papers in Journals and Books Edited Books Doctoral Theses Master's Theses Bachelor's Theses	Publications Link to the publication database of the Vienna University of Technology Papers in Conference Proceedings [V104] H. Karamitaheri, N. Neophytou, H. Kosina: "Thermal Conductivity of Si Nanowires and Ultra Thin-Layers Using Atomistic Phonon Dispersions"; Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 2013-06-30 - 2013-07-04; in: "Book of Abstracts", (2013), 1 pages. [V103] N. Neophytou, H. Karamitaheri, H. Kosina: "Low Dimensional Semiconductor Thermoelectric Materials: Design Approaches from Atomistic Calculations for Electrons and Phonons"; Talk: The 32nd International Conference on Thermoelectrics, Kobe, Japan; 2013-06-30 - 2013-07-04; in: "Book of Abstracts", (2013), 1 pages. [V102] R. Orio, S. Selberherr: "About Voids in Copper Interconnects"; Talk: International Conference on Materials for Advanced Technologies (ICMAT), Singapore (invited); 2013-06-30 - 2013-07-05; in: "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2013)", (2013), 8. [V101] G.G. Kareva, M. Vexler, Yu.Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Poster: International Conference on Insulating Films on Semiconductors (INFOS), Cracow, Poland; 2013-06-25 - 2013-06-28; in: "Book of Abstracts", (2013), ISBN: 978-83-7814-115-0; 246 - 247. [V100] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Design and Applications of Magnetic Tunnel Junction Based Logic Circuits"; Talk: The 9thConference on Ph.D. Research in Microelectronics & Electronics- PRIME 2013, Villach, Austria; 2013-06-24 - 2013-06-27; in: "Proceedings of the 9th Conference on Ph.D. Research in Microelectronics & Electronics", (2013), ISBN: 978-1-4673-4580-4; 157 - 160. [V99] A. Makarov, V. Sverdlov, S. Selberherr: "Magnetic oscillation of the transverse domain wall in a penta-layer MgO-MTJ"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; 338 - 339. [V98] D. Osintsev, V. Sverdlov, S. Selberherr: "Calculation of the electron mobility and spin lifetime enhancement by strain in thin silicon films"; Poster: International Symposium on Nanostructures, St. Petersburg, Russian federation; 2013-06-24 - 2013-06-28; in: "Proceedings of the 21st International Symposium Nanostructures", (2013), ISBN: 978-5-4386-0145-6; 69 - 70. [V97] Ph. Tillet, K. Rupp, S. Selberherr, C. Lin: "Towards Performance-Portable, Scalable, and Convenient Linear Algebra"; Talk: USENIX Workshop on Hot Topics in Parallelism, San Jose, CA, USA; 2013-06-24 - 2013-06-25; in: "Proceedings of 5th USENIX Workshop on Hot Topics in Parallelism", (2013), 1 - 8. [V96] Z. Stanojevic, H. Kosina: "Modeling Surface-Roughness-Induced Scattering in Non-Planar Silicon Nanostructures"; Talk: Silicon Nanoelectronics Workshop, Kyoto, Japan; 2013-06-09 - 2013-06-10; in: "The 2013 Silicon Nanoelectronics Workshop (SNW)", (2013), 93 - 94. [V95] O. Baumgartner, Z. Stanojevic, H. Kosina: "Modeling of the Effects of Band Structure and Transport in Quantum Cascade Detectors"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), ISBN: 978-3-901578-26-7; 86 - 87. [V94] W. Gös, M. Toledano-Luque, O. Baumgartner, F. Schanovsky, B. Kaczer, T. Grasser: "A Comprehensive Model for Correlated Drain and Gate Current Fluctuations"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 46 - 47. [V93] H. Karamitaheri, N. Neophytou, H. Kosina: "Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 98 - 99. [V92] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Optimization of Spin-Transfer Torque Magnetic Tunnel Junction-Based Logic Gates"; Poster: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 244 - 245. [V91] A. Makarov, V. Sverdlov, S. Selberherr: "Structural Optimization of MTJs with a Composite Free Layer"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), ISBN: 978-3-901578-26-7; 74 - 75. [V90] D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of Surface Roughness Scattering on Spin Lifetime in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), ISBN: 978-3-901578-26-7; 76 - 77. [V89] Z. Stanojevic, O. Baumgartner, K. Schnass, M. Karner, H. Kosina: "VSP - a Quantum Simulator for Engineering Applications"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 132 - 133. [V88] V. Sverdlov, H. Mahmoudi, A. Makarov, D. Osintsev, J. Weinbub, T. Windbacher, S. Selberherr: "Modeling Spin-Based Devices in Silicon"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan (invited); 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), ISBN: 978-3-901578-26-7; 70 - 71. [V87] S. Touski, M. Pourfath, H. Kosina: "Electronic Transport in Graphene Nanoribbons in the Presence of Substrate Surface Corrugation"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), 108 - 109. [V86] T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Switching Optimization of an Electrically Readand Writable Magnetic Logic Gate"; Talk: International Workshop on Computational Electronics (IWCE), Nara, Japan; 2013-06-04 - 2013-06-07; in: "Proceedings of the 16th International Workshop on Computational Electronics (IWCE 2013)", (2013), ISBN: 978-3-901578-26-7; 238 - 239. [V85] R. Orio, S. Selberherr: "Physically Based Models of Electromigration"; Talk: Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong (invited); 2013-06-03 - 2013-06-05; in: "Proceedings of the International Confernece on Electron Devices and Solid-State Circuits (EDSSC)", 290 (2013), 1 - 2. [V84] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov, R. Georgieva: "Stochastic Alternative to Newton's Acceleration"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2013-06-03 - 2013-06-07; in: "Abstracts International Conference on Large-Scale Scientific Computations (LSSC)", (2013), 77 - 78. [V83] J. M. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr: "The Role of Annihilation in a Wigner Monte Carlo Approach"; Talk: International Conference on Large-Scale Scientific Computations (LSSC), Sozopol, Bulgaria; 2013-06-03 - 2013-06-07; in: "Abstracts of the International Confernece on Large-Scale Scientific Computations (LSSC)", (2013), 78. [V82] M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr: "Modeling and Characterization of InAlN/GaN HEMTs at Elevated Temperatures"; Talk: International Confernece on Advances in Electronic and Photonic Technologies, High Tatras, Spa Novy Smokovec, Slovakia; 2013-06-02 - 2013-06-05; in: "Proceedings of the International Confernece on Advances in Electronic and Photonic Technologies", (2013), ISBN 978-80-554-0689-3 48- 51. [V81] M. Moradinasab, M. Pourfath, H. Kosina: "Spin Filtering in Zigzag Graphene Nanoribbons Using 7-5 Defects"; Poster: Graphene Week, Chemnitz, Germany; 2013-06-02 - 2013-06-07; in: "Book of Abstracts", (2013), 250. [V80] M. Molnar, V. Palankovski, D. Donoval, J. Kuzmik, J. Kovac, A. Chvala, J. Marek, P. Pribytny, S. Selberherr: "Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical Simulation"; Talk: Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), Warnemunde, Germany; 2013-05-26 - 2013-05-29; in: "Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits", (2013), ISBN: 978-3-00-041435-0; 135 - 136. [V79] F. Rudolf, K. Rupp, S. Selberherr: "ViennaMesh - a Highly Flexible Meshing Framework"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 2013-05-20 - 2013-05-25; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 pages. [V78] J. Weinbub, K. Rupp, S. Selberherr: "Increasing Flexibility and Reusability of Finite Element Simulations With ViennaX"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 2013-05-20 - 2013-05-25; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1 pages. [V77] K. Rupp, B. Smith: "On Level Scheduling for Incomplete LU Factorization Preconditioners on Accelerators"; Talk: International Congress on Computational Engineering and Sciences (FEMTEC), Las Vegas, USA; 2013-05-19 - 2013-05-24; in: "Abstracts 4th International Congress on Computational Engineering and Sciences", (2013), 1. [V76] D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films"; Talk: Meeting of the Electrochemical Society, Advanced Semiconduc-tor-on-Insulator Technology and Related Physics, Toronto, Canada; 2013-05-12 - 2013-05-16; in: "223rd ECS Meeting", 894 (2013), ISBN: 978-1-56677-866-4; 1. [V75] K. Rupp, F. Rudolf, J. Weinbub: "A Discussion of Selected Vienna-Libraries for Computational Science"; Talk: C++Now, Aspen, CO, USA; 2013-05-12 - 2013-05-17; in: "Proceedings of C++Now (2013)", (2013), 10 pages. [V74] J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, G. Groeseneken, Bened. Schwarz, M. Bina, M. Waltl, P.-J. Wagner, T. Grasser: "Reduction of the BTI Time-Dependent Variability in Nanoscaled MOSFETs by Body Bias"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6. [V73] T. Grasser: "Fundamentals of RTN, BTI, and Hot Carrier Degradation: A Matter of Timescales"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA (Tutorial); 2013-04-14 - 2013-04-18; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1. [V72] T. Grasser, K. Rott, H. Reisinger, P.-J. Wagner, W. Gös, F. Schanovsky, M. Waltl, M. Toledano-Luque, B. Kaczer: "Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6. [V71] G. Pobegen, M. Nelhiebel, T. Grasser: "Detrimental impact of hydrogen passivation on NBTI and HC degradation"; Poster: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 6. [V70] A. P. Singulani, H. Ceric, L. Filipovic, E. Langer: "Impact of Bosch Scallops Dimensions on Stress of an Open Through Silicon Via Technology"; Talk: international Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Poland; 2013-04-14 - 2013-04-17; in: "Proceedings of the IEEE 14th International Conference on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EurSimE)", (2013), ISBN: 978-1-4673-6137-8; 6 pages. [V69] P. Weckx, B. Kaczer, M. Toledano-Luque, T. Grasser, Ph. J. Roussel, H. Kukner, P. Raghavan, F. Catthoor, G. Groeseneken: "Defect-based Methodology for Workload-dependent Circuit Lifetime Projections - Application to SRAM"; Talk: International Reliability Physics Symposium (IRPS), Monterey, CA, USA; 2013-04-14 - 2013-04-18; in: "Conference Proceedings of International Reliability Physics Symposium (IRPS 2013)", (2013), 1 - 7. [V68] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Impact of Device Parameters on the Reliability of the Magnetic Tunnel Junction Based Implication Logic Gates"; Poster: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; 68 - 69. [V67] D. Osintsev, V. Sverdlov, S. Selberherr: "Shear Strain: An Efficient Spin Lifetime Booster in Advanced UTB2 SOI MOSFETs"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine; 2013-04-08 - 2013-04-11; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; 64 - 65. [V66] V. Sverdlov, S. Selberherr: "Silicon Spintronics and its Applications"; Talk: International Workshop "Functional Nanomaterials and Devices", Kyiv, Ukraine (invited); 2013-04-08 - 2013-04-11; in: "Proceedings of the 7th International Workshop "Functional Nanomaterials and Devices"", (2013), ISBN: 978-966-02-6779-4; 51 - 52. [V65] M. Schrems, C. Schrank, J. Siegert, J. Kraft, J. Teva, S. Selberherr: "Metrology Requirements for Manufacturing 3D Integrated ICs"; Talk: International Confernece on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN), Gaithersburg, USA (invited); 2013-03-25 - 2013-03-28; in: "Proceedings of the International Confernece on Frontiers of Characterization and Metrology for Nanoelectronics (FCMN)", (2013), 137 - 139. [V64] D. Osintsev, V. Sverdlov, S. Selberherr: "Influence of the valley degeneracy on spin relaxation in thin silicon films"; Poster: International Conference on Ultimate Integration of Silicon (ULIS), University of Warwick, UK; 2013-03-19 - 2013-03-21; in: "The 14th Edition of the `International Conference on Ultimate Integration on Silicon´ (ULIS 2013)", (2013), 33. [V63] N. Neophytou, H. Kosina: "Thermoelectric Power Factor Engineering of Low-Dimensional and Nanocomposite Si Nanostructures"; Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in: "Bulletin American Physical Society (APS March Meeting)", (2013). [V62] D. Osintsev, V. Sverdlov, S. Selberherr: "Enhanced intervalley splitting and reduced spin relaxation in strained thin silicon films"; Talk: APS March Meeting, Baltimore, Maryland, USA; 2013-03-18 - 2013-03-22; in: "Bulletin American Physical Society (APS March Meeting)", (2013). [V61] D. Osintsev, V. Sverdlov, S. Selberherr: "Reduction of the Surface Roughness Induced Spin Relaxation in SOI Structures: An Analytical Approach"; Talk: Workshop of the Thematic Network on Silicon on Insulator Technology, Devices, and Circuits (EUROSOI), Paris, France; 2013-01-21 - 2013-01-23; in: "Conference Proceedings of the Ninth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits", 46 (2013). [V60] M. Bina, K. Rupp, S. Tyaginov, O. Triebl, T. Grasser: "Modeling of Hot Carrier Degradation Using a Spherical Harmonics Expansion of the Bipolar Boltzmann Transport Equation"; Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in: "Proceedings of the 2012 IEEE International Electron Devices Meeting (IEDM)", (2012), 713 - 716. [V59] T. Grasser, H. Reisinger, K. Rott, M. Toledano-Luque, B. Kaczer: "On the Microscopic Origin of the Frequency Dependence of Hole Trapping in pMOSFETs"; Talk: International Electron Devices Meeting (IEDM), San Francisco, CA, USA; 2012-12-10 - 2012-12-12; in: "Proceedings of the 2012 IEEE International Electron Devices Meeting (IEDM)", (2012), 470 - 473. [V58] A. P. Singulani, H. Ceric, S. Selberherr: "Thermo-mechanical Simulations of an Open Tungsten TSV"; Talk: IEEE Electronics Packaging Technology Conference (EPTC), Singapore; 2012-12-05 - 2012-12-07; in: "Proceedings of the IEEE 14th Electronics Packaging Technology Conference (EPTC)", (2012), ISBN: 978-1-4673-4551-4; 110 - 114. [V57] A. Makarov, V. Sverdlov, S. Selberherr: "Geometry Dependence of the Switching Time in MTJs with a Composite Free Layer"; Talk: Workshop on Innovative Devices and Systems (WINDS), Kona (invited); 2012-12-02 - 2012-12-07; in: "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0; 21. [V56] D. Osintsev, V. Sverdlov, S. Selberherr: "Surface Roughness Induced Reduction of Spin Relaxation in Thin Silicon Films"; Talk: Workshop on Innovative Devices and Systems (WINDS), Kona (invited); 2012-12-02 - 2012-12-07; in: "Abstracts Workshop on Innovative Devices and Systems (WINDS)", (2012), ISBN: 978-3-901578-25-0; 33. [V55] M. Molnar, G. Donnarumma, V. Palankovski, J. Kuzmik, D. Donoval, J. Kovac, S. Selberherr: "Electrothermal Analysis of In0.12Al0.88N/GaN HEMTs"; Talk: International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM), Smolenice, Slovakia; 2012-11-11 - 2012-11-15; in: "Proceedings of the 9th International ASDAM", (2012), ISBN: 978-1-4673-1195-3; 55 - 58. [V54] T. Grasser, B. Kaczer, H. Reisinger, P.-J. Wagner, M. Toledano-Luque: "Modeling of the bias temperature instability under dynamic stress and recovery conditions"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (invited); 2012-10-29 - 2012-11-01; in: "11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2474-8; 1 - 4. [V53] R. Orio, S. Selberherr: "Formation and Movement of Voids in Copper Interconnect Structures"; Talk: International Conference on Solid State and Integrated Circuit Technology (ICSICT), Xi'an, China (invited); 2012-10-29 - 2012-11-01; in: "Proceedings of the International Conference on Solid-State and Integrated Circuit Technology (ICSICT)", (2012), ISBN: 978-1-4673-2475-5; 378 - 381. [V52] H. Kosina, N. Neophytou: "Low Dimensional Nanostructures as Efficient Thermoelectric Materials for Energy Conversion and Generation"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (invited); 2012-10-26 - 2012-10-28; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 419. [V51] N. Neophytou, H. Kosina: "Atomistic Simulations of the Electronic Properties of Si and Ge Nanowires and Thin-Layers: Bandstructure Effects"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China (invited); 2012-10-26 - 2012-10-28; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 488. [V50] V. Sverdlov, A. Makarov, S. Selberherr: "Fast Switching in MTJs with a Composite Free Layer"; Talk: BIT's Annual World Congress of Nanoscience and Nanotechnology, Qingdao, China; 2012-10-26 - 2012-10-28; in: "Abstracts of BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology 2012", (2012), 291. [V49] M. Jurkovic, D. Gregusova, S. Hascik, M. Blaho, K. Cico, V. Palankovski, J. Carlin, N. Grandjean, J. Kuzmik: "Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT"; Talk: International Workshop on Nitride Semiconductors 2012 (IWN), Sapporo, Japan; 2012-10-14 - 2012-10-19; in: "International Workshop on Nitride Semiconductors", (2012), 2 pages. [V48] G. Pobegen, M. Nelhiebel, T. Grasser: "Recent Results Concerning the Influence of Hydrogen on the Bias Temperature Instability"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "2012 IEEE International Integrated Reliability Workshop Final Report", (2012), 54 - 59. [V47] K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser: "Impact and measurement of short term threshold instabilities in MO OSFETs of analog circuits"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), 31 - 34. [V46] S. Tyaginov, T. Grasser: "Modeling of Hot-Carrier Degradation: Physics and Controversial Issues"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), 206 - 215. [V45] P.-J. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L.K.J. Vandamme, T. Grasser: "On the Correlation Between NBTI, SILC, and Flicker Noise"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), 60 - 64. [V44] M. Waltl, P.-J. Wagner, H. Reisinger, K. Rott, T. Grasser: "Advanced Data Analysis Algorithms for the Time-Dependent Defect Spectroscopy of NBTI"; Talk: IEEE International Integrated Reliability Workshop, California; 2012-10-14 - 2012-10-18; in: "IEEE International Integrated Reliability Workshop Final Report", (2012), 74 - 79. [V43] J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, G. Eneman, Ph. J. Roussel, M. Cho, T. Kauerauf, T. Grasser, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Reliability of SiGe Channel MOS"; Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper ID 3119, 1 pages. [V42] H. Karamitaheri, M. Pourfath, N. Neophytou, H. Kosina: "Theoretical Study of a Zigzag Graphene Nanoribbon Field Effect Transistor"; Talk: Meeting of the Electrochemical Society (ECS), Honolulu, USA; 2012-10-07 - 2012-10-12; in: "ECS Meeting", (2012), 1 pages. [V41] V. Palankovski, J. Kuzmik: "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications"; Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper ID 2551, 1 pages. [V40] V. Palankovski, J. Kuzmik: "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation"; Talk: Honolulu PRiME 2012, Honolulu, USA; 2012-10-07 - 2012-10-12; in: "ECS Meeting Abstracts", MA2012-02 (2012), Paper ID 2543, 1 pages. [V39] T. Windbacher, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Fully Electrically Read- Write Magneto Logic Gates"; Talk: 5th International Confernece on Micro-Nanoelectronics, Nanotechnologies & MEMS, Crete, Greece; 2012-10-07 - 2012-10-10; in: "Book of Abstracts", (2012). [V38] R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Poster: 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Cagliari, Italy; 2012-10-01 - 2012-10-05; in: "Proceedings of the 23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis", (2012), 1981 - 1986. [V37] A. Makarov, V. Sverdlov, S. Selberherr: "High Thermal Stability and Low Switching Energy Barrier in Spin-transfer Torque RAM with Composite Free Layer"; Poster: International Conference on Solid State Devices and Materials, Kyoto, Japan; 2012-09-25 - 2012-09-27; in: "Extended Abstracts of 2012 International Conference on Solid State Devices and Materials", (2012), 2 pages. [V36] D. Osintsev, V. Sverdlov, S. Selberherr: "Modeling Spintronic Effects in Silicon"; Talk: International Workshop on Mathematics for Semiconductor Heterostructures (MSH), Berlin, Germany (invited); 2012-09-24 - 2012-09-28; in: "Abstracts of the International Workshop on Mathematics for Semiconductor Heterostructures (MSH)", (2012), 3 pages. [V35] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: 24th European Modeling and Simulation Symposium (EMSS2012), Vienna, Austria; 2012-09-19 - 2012-09-21; in: "Proceedings of the 24th European Modeling and Simulation Symposium", (2012), ISBN: 978-88-97999-01-0; 156 - 162. [V34] H. Mahmoudi, V. Sverdlov, S. Selberherr: "MTJ-based Implication Logic Gates and Circuit Architecture for Large-Scale Spintronic Stateful Logic Systems"; Talk: European Solid-State Device Research Conference (ESSDERC), Bordeaux, France; 2012-09-17 - 2012-09-21; in: "Proceedings of the 42th European Solid-State Device Research Conference (ESSDERC)", (2012), ISBN: 978-1-4673-3086-2; 254 - 257. [V33] A. Starkov, I. Baranov, O. Pakhomov, I. Starkov, A. Zaitsev: "Principles of Solid-State Cooler on Layered Multiferroics"; Poster: 5th IIR/IIF International Conference on Magnetic Refrigeration at Room Temperature (THERMAG V), Grenoble, France; 2012-09-17 - 2012-09-20; in: "Conference guide & book of abstracts", (2012), 1 pages. [V32] M. Bina, O. Triebl, Bened. Schwarz, M. Karner, B. Kaczer, T. Grasser: "Simulation of Reliability on Nanoscale Devices"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 109 - 112. [V31] H. Ceric, R. Orio, S. Selberherr: "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 264 - 267. [V30] G. Donnarumma, V. Palankovski, S. Selberherr: "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 125 - 128. [V29] L. Filipovic, S. Selberherr: "Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 189 - 192. [V28] H. Mahmoudi, V. Sverdlov, S. Selberherr: "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 225 - 228. [V27] A. Makarov, V. Sverdlov, S. Selberherr: "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 229 - 232. [V26] R. Orio, H. Ceric, S. Selberherr: "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 268 - 271. [V25] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 153 - 156. [V24] K. Rupp, C. Jungemann, M. Bina, A. Jüngel, T. Grasser: "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 19 - 22. [V23] J. Weinbub, K. Rupp, S. Selberherr: "A Flexible Execution Framework for High-Performance TCAD Applications"; Poster: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Denver, USA; 2012-09-05 - 2012-09-07; in: "Proceedings of the 17th International Conference on Simulation of Semiconductor Processes and Devices", (2012), ISBN: 978-0-615-71756-2; 400 - 403. [V22] Z. Stanojevic, O. Baumgartner, H. Kosina: "A stable discretization method for "Dirac-like" effective Hamiltonians"; Poster: International Quantum Cascade Lasers School & Workshop 2012 (IQCLSW 2012), Baden near Vienna, Austria; 2012-09-02 - 2012-09-06; in: "Proceedings of the International Quantum Cascade Lasers School & Workshop", (2012), 127. [V21] L. Filipovic, S. Selberherr: "Electric Field Based Simulations of Local Oxidation Nanolithography using Atomic Force Microscopy in a Level Set Environment"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; 265 - 272. [V20] R. Orio, H. Ceric, S. Selberherr: "Analysis of Resistance Change Development due to Voiding in Copper Interconnects ended by a Through Silicon Via"; Talk: International Symposium on Microelectronics Technology and Devices (SBMicro), Brasilia, Brazil; 2012-08-30 - 2012-09-02; in: "ECS Transactions", 49, 1 (2012), ISBN: 978-1-56677-990-6; 273 - 280. [V19] A. Starkov, O. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Poster: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 238. [V18] A. Starkov, I. Starkov: "Domain-Wall Motion for Slowly Varying Electric Field"; Talk: 11th International Symposium on Ferroic Domains and Micro- to Nanoscopic Structures (ISFD), Ekaterinburg, Russia; 2012-08-20 - 2012-08-24; in: "Abstract Book", (2012), 93. [V17] I.J. Serrano-Lopez, A. Garcia-Barrientos, V. Palankovski,L. del Carmen Cruz-Netro: "Non-Stationary Effects of Space Charge in InN Films"; Talk: International Materials Research Congress, Cancun, Mexico; 2012-08-12 - 2012-08-17; in: "XXI International Materials Research Congress", (2012), 1 pages. [V16] H. Mahmoudi, V. Sverdlov, S. Selberherr: "Spintronic Stateful Logic Gates using Magnetic Tunnel Junctions Written by Spin-Transfer Torque"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in: "Book of Abstracts", (2012), P-6. [V15] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Valley Splitting and Spin Relaxation in Strained Silicon Quantum Wells"; Poster: The 7th International Conference on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-VII), Eindhoven, the Netherlands; 2012-08-05 - 2012-08-08; in: "Book of Abstracts", (2012), P-27. [V14] D. Osintsev, Z. Stanojevic, O. Baumgartner, V. Sverdlov, S. Selberherr: "Strain-Induced Reduction of Surface Roughness Dominated Spin Relaxation in MOSFETs"; Poster: International Conference on Physics of Semiconductor (ICPS), Zurich, Switzerland; 2012-07-29 - 2012-08-03; in: "31st International Conference on the Physics of Semiconductors (ICPS 2012)", (2012), 1 pages. [V13] A. Makarov, V. Sverdlov, S. Selberherr: "STT-RAM with a Composite Free Layer: High Thermal Stability, Low Switching Barrier, and Sharp Switching Time Distribution"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), H4. [V12] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Surface Roughness Induced Spin Scattering and Relaxation in Silicon SOI MOSFETs"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), B3. [V11] T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr: "Simulations of an Electrical Read-Write Operation of a Magnetic XOR Gate"; Talk: Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012), Sydney, Australia; 2012-07-23 - 2012-07-25; in: "Abstract of Worldwide Universities Network 4th International Conference on Spintronics (WUN-SPIN 2012)", (2012), J3. [V10] V. Sverdlov, S. Selberherr: "MOSFET and Spin Transistor Simulations"; Talk: 2012 CMOS Emerging Technologies, Vancouver, BC Canada (invited); 2012-07-18 - 2012-07-21; in: "Abstract of 2012 CMOS Emerging Technologies", (2012), 1 pages. [V9] A. I. Dedyk, Yu. V. Pavlova, A. Semenov, O. Pakhomov, A. Starkov, I. Starkov, P. Yu. Beliavskiy: "The Influence of "Heating-Cooling" Process Rate on Temperature Hysteresis of Ferroelectric Capasitor Structures"; Poster: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1. [V8] A. Starkov, I. Starkov: "Theoretical Model of SPM-tip Electrostatic Field Accounting for Dead Layer and Domain Wall"; Talk: 21st International Symposium on Applications of Ferroelectrics (ISAF), Aveiro, Portugal; 2012-07-09 - 2012-07-13; in: "Proceedings of 21st International Symposium on Applications of Ferroelectrics (ISAF)", (2012), ISBN: 978-1-4673-2668-1. [V7] I. Starkov, H. Enichlmair, S. Tyaginov, T. Grasser: "Charge-Pumping Extraction Techniques for Hot-Carrier Induced Interface and Oxide Trap Spatial Distributions in MOSFETs"; Talk: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 6. [V6] S. Tyaginov, I. Starkov, O. Triebl, M. Karner, C. Kernstock, C. Jungemann, H. Enichlmair, J.M. Park, T. Grasser: "Impact of Gate Oxide Thickness Variations on Hot-Carrier Degradation"; Poster: International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore; 2012-07-02 - 2012-07-06; in: "Proceedings of the 19th International Symposium on the Physical & Failure Analysis of Integrated Circuits", (2012), ISBN: 978-1-4673-0980-6; 1 - 5. [V5] A. Semenov, A. I. Dedyk, P. Y. Belavsky, Yu. V. Pavlova, S. Karmanenko, O. Pakhomov, A. Starkov, I. Starkov: "A Study of Ferroelectric Multilayer Structures Based on BST Films Containing High Concentration of Magnetic Ions"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 77. [V4] A. Starkov, O. Pakhomov, I. Starkov: "Thermodynamic Foundations of Solid-State Cooler Based on Multiferroic Materials"; Poster: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 76. [V3] I. Starkov, H. Enichlmair, T. Grasser: "Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in High-Voltage n-MOSFET"; Talk: Workshop on Dielectrics in Microelectronics (WODIM), Dresden, Germany; 2012-06-25 - 2012-06-27; in: "Abstract Booklet", (2012), 40. [V2] J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, Ph. J. Roussel, T. Grasser, M. Cho, T. Kauerauf, L. Witters, G. Hellings, L. Ragnarsson, N. Horiguchi, M. Heyns, G. Groeseneken: "Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications"; Talk: IEEE International Conference on IC Design and Technology (ICICDT), Austin, TX, USA (invited); 2012-05-30 - 2012-06-01; in: "Proceedings of IEEE International Conference on IC Design and Technology", (2012), 1 - 4. [V1] K. Rupp, P. Lagger, T. Grasser: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; Talk: International Workshop on Computational Electronics (IWCE), Madison, WI, USA; 2012-05-22 - 2012-05-25; in: "Proceedings of the 15th International Workshop on Computational Electronics (IWCE 2012)", (2012), 109 - 110. Papers in Journals and Books [P57] L. Filipovic, S. Selberherr: "A Method for Simulating Atomic Force Microscope Nanolithography in the Level Set Framework"; Microelectronic Engineering, 107 (2013), 23 - 32. [P56] J. Franco, B. Kaczer, Ph. J. Roussel, J. Mitard, M. Cho, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI"; IEEE Transactions on Electron Devices, 60 (2013), 1; 396 - 404. [P55] J. Franco, B. Kaczer, M. Toledano-Luque, Ph. J. Roussel, T. Kauerauf, J. Mitard, L. Witters, T. Grasser, G. Groeseneken: "SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues"; IEEE Transactions on Electron Devices, 60 (2013), 1; 405 - 412. [P54] S. Ahmed, M. Nedjalkov, D. Vasileska: "Comparative Study of Various Self-Consistent Event Biasing Schemes for Monte Carlo Simulations of Nanoscale MOSFETs"; in: "Theory and Applications of Monte Carlo Simulations", V. Chan (ed.); Intech Open Access Publisher, 2013, ISBN: 978-953-51-1012-5, 109 - 133. [P53] M. Jurkovic, D. Gregusova, V. Palankovski, S. Hascik, M. Blaho, K. Cico, K. Frohlich, J. Carlin, N. Grandjean, J. Kuzmik: "Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access Region"; IEEE Electron Device Letters, 34 (2013), 3; 432 - 434. [P52] B. Kaczer, M. Toledano-Luque, W. Gös, T. Grasser, G. Groeseneken: "Gate Current Random Telegraph Noise and Single Defect Conduction"; Microelectronic Engineering, 109 (2013), 123 - 125. [P51] H. Karamitaheri, N. Neophytou, M. Karami Taheri, R. Faez, H. Kosina: "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method"; Journal of Electronic Materials, 42 (2013), 7; 2091 - 2097. [P50] H. Karamitaheri, N. Neophytou, H. Kosina: "Ballistic Phonon Transport in Ultra-Thin Silicon Layers: Effects of Confinement and Orientation"; Journal of Applied Physics, 113 (2013), 20; 204305-1 - 204305-9. [P49] H. Karamitaheri, M. Pourfath, R. Faez, H. Kosina: "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons"; IEEE Transactions on Electron Devices, 60 (2013), 7; 2142 - 2147. [P48] A. Makarov, V. Sverdlov, S. Selberherr: "Magnetic Tunnel Junctions with a Composite Free Layer: A New Concept for Future Universal Memory"; in: "Future Trends in Microelectronics - Frontiers and Innovations", S. Luryi, J. Xu, A. Zaslavsky (ed.); John Wiley & Sons, 2013, (invited), ISBN: 978-1118-44216-6, 93 - 101. [P47] D. Osintsev, V. Sverdlov, S. Selberherr: "Spin Lifetime Enhancement by Shear Strain in Thin Silicon-on-Insulator Films"; in: "Advanced Semiconductor-on-Insulator Technology and Related Physics 16, Vol. 53, No. 5", Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed.); issued by: The Electrochemical Society; ECS Transactions, 2013, ISBN: 978-1-62332-027-0, 203 - 208. [P46] G.G. Kareva, M. Vexler, Yu.Yu. Illarionov: "Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling Diode"; Microelectronic Engineering, 109 (2013), 270 - 273. [P45] H. Mahmoudi, V. Sverdlov, S. Selberherr: "Influence of Geometry on the Memristive Behavior of Domain Wall Spintronic Memristors and its Applications for Measurements"; Journal of Superconductivity and Novel Magnetism, 26 (2013), 5; 1745 - 1749. [P44] H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr: "Implication Logic Gates Using Spin-Transfer-Torque-Operated Magnetic Tunnel Junctions for Intrinsic Logic-In-Memory"; Solid-State Electronics, 84 (2013), 191 - 197. [P43] J.-F. Mennemann, A. Jüngel, H. Kosina: "Transient Schrödinger-Poisson simulations of a high-frequency resonant tunneling diode oscillator"; Journal of Computational Physics, 239 (2013), 187 - 205. [P42] M. Nedjalkov, P. Schwaha, S. Selberherr, J. M. Sellier, D. Vasileska: "Wigner Quasi-Particle Attributes - An Asymptotic Perspective"; Applied Physics Letters, 102 (2013), 16; 163113-1 - 163113-4. [P41] J. Rodriguez, J. Weinbub, D. Pahr, K. Rupp, S. Selberherr: "Distributed High-Performance Parallel Mesh Generation with ViennaMesh"; in: "Lecture Notes in Computer Science, Vol. 7782", P. Manninen, P. Öster (ed.); Springer, 2013, ISBN: 978-3-642-36802-8, 548 - 552. [P40] N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, D. Narducci: "Simultaneous Increase in Electrical Conductivity and Seebeck Coefficient in Highly Boron-Doped Nanocrystalline Si"; Nanotechnology, 24 (2013), 20; 205402. [P39] D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr: "Current and Conductance Modulation at Elevated Temperature in Silicon and InAs-based Spin Field-Effect Transistors"; Sains Malaysiana, 42 (2013), 2; 205 - 211. [P38] G. Pobegen, T. Grasser: "Efficient Characterization of Threshold Voltage Instabilities in SiC nMOSFETs Using the Concept of Capture-Emission-Time Maps"; Materials Science Forum, 740-742 (2013), 757 - 760. [P37] J. Weinbub, K. Rupp, S. Selberherr: "A Flexible Dynamic Data Structure for Scientific Computing"; in: "Lecture Notes in Electrical Engineering, Vol. 229", G.-C. Yang, S.-L. Ao, L. Gelman (ed.); Springer, 2013, (invited), ISBN: 978-94-007-6189-6, 565 - 577. [P36] A. S. Starkov, O. V. Pakhomov, I. Starkov: "Account for Mutual Influence of Electrical, Elastic, and Thermal Phenomena for Ferroelectric Domain Wall Modeling"; Ferroelectrics, 442 (2013), 1; 10 - 17. [P35] A. S. Starkov, O. V. Pakhomov, I. Starkov: "Theoretical Model for Thin Ferroelectric Films and the Multilayer Structures Based on Them"; Journal of Experimental and Theoretical Physics, 116 (2013), 6; 987 - 994. [P34] A. S. Starkov, I. Starkov: "Domain Wall Motion for Slowly Varying Electric Field"; Ferroelectrics, 442 (2013), 1; 1 - 9. [P33] I. Starkov, H. Enichlmair: "Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs"; Journal of Vacuum Science & Technology B, 31 (2013), 1; 01A118-1 - 01A118-7. [P32] S. M. Tabatabaei, M. Noei, K. Khaliji, M. Pourfath, M. Fathipour: "A First-Principles Study on the Effect of Biaxial Strain on the Ultimate Performance of Monolayer MoS2-Based Double Gate Field Effect Transistor"; Journal of Applied Physics, 113 (2013), 163708-1 - 163708-6. [P31] M. Toledano-Luque, B. Kaczer, T. Grasser, Ph. J. Roussel, J. Franco, G. Groeseneken: "Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime Distributions"; Journal of Vacuum Science & Technology B, 31 (2013), 1; 01A114-1 - 01A114-4. [P30] J. Weinbub, K. Rupp, S. Selberherr: "A Lightweight Task Graph Scheduler for Distributed High-Performance Scientific Computing"; in: "Lecture Notes in Computer Science, Vol. 7782", P. Manninen, P. Öster (ed.); Springer, 2013, ISBN: 978-3-642-36802-8, 563 - 566. [P29] M. Vexler, S. Tyaginov, Yu.Yu. Illarionov, Y. K. Sing, A. D. Shenp, V. V. Fedorov, D. V. Isakov: "A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel Structures"; Physics of Semiconductor Devices, 47 (2013), 5; 686 - 694. [P28] T. Windbacher, O. Triebl, D. Osintsev, A. Makarov, V. Sverdlov, S. Selberherr: "Simulation Study of an Electrically Read- and Writable Magnetic Logic Gate"; Microelectronic Engineering, (2013). [P27] O. Baumgartner, Z. Stanojevic, H. Kosina: "Monte Carlo Simulation of Electron Transport in Quantum Cascade Lasers"; in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 59 - 67. [P26] L. Filipovic, S. Selberherr: "A Two-Dimensional Lorentzian Distribution for an Atomic Force Microscopy Simulator"; in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 97 - 104. [P25] S. Ahmed, K. D. Holland, N. Paydavosi, C. Rogers, A. Alam, N. Neophytou, D. Kienle, M. Vaidyanathan: "Impact of Effective Mass on the Scaling Behavior of the fT and fmax of III-V High-Electron-Mobility Transistors"; IEEE Transactions on Nanotechnology, 11 (2012), 6; 1160 - 1173. [P24] V. Kysenko, K. Rupp, O. Marchenko, S. Selberherr, A. Anisimov: "GPU-Accelerated Non-negative Matrix Factorization for Text Mining"; in: "Lecture Notes in Computer Science, Vol. 7337", G. Bouma, A. Ittoo, E. Metais, H. Wortmann (ed.); Springer, 2012, ISBN: 978-3-642-31177-2, 158 - 163. [P23] J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, G. Groeseneken: "BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic"; Microelectronics Reliability, 52 (2012), 1932 - 1935. [P22] M. Nedjalkov, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz, I. Dimov, P. Schwaha: "Physical Scales in the Wigner-Boltzmann Equation"; Annals of Physics, 328 (2012), 220 - 237. [P21] R. Orio, H. Ceric, S. Selberherr: "Electromigration Failure in a Copper Dual-Damascene Structure with a Through Silicon Via"; Microelectronics Reliability, 52 (2012), 1981 - 1986. [P20] A. Makarov, V. Sverdlov, S. Selberherr: "MTJs with a Composite Free Layer for High-Speed Spin Transfer Torque RAM: Micromagnetic Simulations"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4. [P19] A. Makarov, V. Sverdlov, S. Selberherr: "New Trends in Microelectronics: Towards an Ultimate Memory Concept"; in: "The 8th International Caribbean Conference on Devices, Circuits and Systems", IEEE Xplore, 2012, ISBN: 978-1-4577-1116-9, 1 - 4. [P18] M. Nedjalkov, P. Schwaha, S. Selberherr, D.K. Ferry, D. Vasileska, P. Dollfus, D. Querlioz: "Role of the Physical Scales on the Transport Regime"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3. [P17] D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr: "Reduction of Surface Roughness Induced Spin Relaxation in SOI MOSFETs"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4. [P16] F. Ortmann, S. Roche, J. C. Greer, G. Huhs, T. Shulthess, T. Deutsch, P. Weinberger, M. Payne, J. M. Sellier, J. Sprekels, J. Weinbub, K. Rupp, M. Nedjalkov, D. Vasileska, E. Alfi nito, L. Reggiani, D. Guerra, D.K. Ferry, M. Saraniti, S.M. Goodnick, A. Kloes, L. Colombo, K. Lilja, J. Mateos, T. Gonzalez, E. Velazquez, P. Palestri, A. Schenk, M. Macucci: "Multi-Scale Modelling for Devices and Circuits"; E-Nano Newsletter, Special Issue April 2012 (2012), 31 pages. [P15] V. Palankovski, G. Donnarumma, J. Kuzmik: "Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation"; in: "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, Nr. 3", R. Garg, K. Shenai (ed.); issued by: The Electrochemical Society; ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 223 - 228. [P14] K. Rott, H. Reisinger, S. Aresu, C. Schlünder, K. Kölpin, W. Gustin, T. Grasser: "New Insights on the PBTI Phenomena in SiON pMOSFETs"; Microelectronics Reliability, 52 (2012), 9-10; 1891 - 1894. [P13] K. Rupp: "High-Level Manipulation of OpenCL-Based Subvectors and Submatrices"; Procedia Computer Science, 9 (2012), 1857 - 1866. [P12] V. Palankovski, J. Kuzmik: "A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications"; in: "Gallium Nitride and Silicon Carbide Power Technologies 2, Vol. 50, Nr. 3", R. Garg, K. Shenai (ed.); issued by: The Electrochemical Society; ECS Transactions, 2012, ISBN: 978-1-60768-351-3, 291 - 296. [P11] K. Rupp, P. Lagger, T. Grasser, A. Jüngel: "Inclusion of Carrier-Carrier-Scattering Into Arbitrary-Order Spherical Harmonics Expansions of the Boltzmann Transport Equation"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4. [P10] B. Schwarz, P. Reininger, H. Detz, T. Zederbauer, A. M. Andrews, S. Kalchmair, W. Schrenk, O. Baumgartner, H. Kosina, G. Strasser: "A bi-functional quantum cascade device for same-frequency lasing and detection"; Applied Physics Letters, 101 (2012), 1911091 - 1911094. [P9] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Monte Carlo Investigations of Electron Decoherence due to Phonons"; in: "Monte Carlo Methods and Applications", K. K. Sabelfeld, I. Dimov (ed.); De Gruyter, 2012, ISBN: 978-3-11-029347-0, 203 - 211. [P8] A. Starkov, O. Pakhomov, I. Starkov: "Impact of the Pyroelectric Effect on Ferroelectric Phase Transitions"; Ferroelectrics, 427 (2012), 1; 78 - 83. [P7] A. Starkov, O. Pakhomov, I. Starkov: "Solid-State Cooler: New Opportunities"; Ferroelectrics, 430 (2012), 1; 108 - 114. [P6] M. Toledano-Luque, B. Kaczer, J. Franco, Ph. J. Roussel, T. Grasser, G. Groeseneken: "Defect-Centric Perspective of Time-Dependent BTI Variability"; Microelectronics Reliability, 52 (2012), 9-10; 1883 - 1890. [P5] P. Schwaha, M. Nedjalkov, S. Selberherr, I. Dimov: "Particle-Grid Techniques for Semiclassical and Quantum Transport Simulations"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 3. [P4] A. Yazdanpanah Goharrizi, M. Pourfath, M. Fathipour, H. Kosina: "Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge Roughness"; IEEE Transactions on Electron Devices, 59 (2012), 12; 3527 - 3532. [P3] A. Starkov, O. Pakhomov, I. Starkov, A. Zaitsev, I. Baranov: "Principles of Solid-State Cooler on Layered Multiferroics"; in: "5th International Conference on Magnetic Refrigeration at Room Temperature", C. V. Muller (ed.); Institut International Du Froid, 2012, ISBN: 978-2-91314-994-6, 573 - 581. [P2] J. Weinbub, K. Rupp, L. Filipovic, A. Makarov, S. Selberherr: "Towards a Free Open Source Process and Device Simulation Framework"; in: "The 15th International Workshop on Computational Electronics", IEEE Xplore, 2012, ISBN: 978-1-4673-0705-5, 1 - 4. [P1] A. Garcia-Barrientos, V. Palankovski: "Numerical Simulations of Space Charge Waves in InP Films and Microwave Frequency Conversion under Negative Differential Conductivity"; Applied Physics Letters, 98 (2011), 072110-1 - 072110-3. Edited Books [E3] N. Mori, S. Selberherr (ed.): "16th International Workshop on Computational Electronics Book of Abstracts"; Society for Micro- and Nanoelectronics, 2013, ISBN: 978-3-901578-26-7; 269 pages. [E2] Y. Omura, F. Gamiz, B.-Y. Nguyen, H. Ishii, J. A. Martino, S. Selberherr, J.-P. Raskin (ed.): "Advanced Semiconductor-on-Insulator Technology and Related Physics 16"; The Electrochemical Society, 2013, ISBN: 978-1-62332-027-0; 220 pages. [E1] K. Ishibashi, S.M. Goodnick, S. Selberherr, A. Fujiwara (ed.): "Innovative Nanoscale Devices and Systems"; Society for Micro- and Nanoelectronics, 2012, ISBN: 978-3-901578-25-0; 84 pages. Doctoral Theses [T5] F. Schanovsky: "Atomistic Modeling in the Context of the Bias Temperature Instability"; Reviewer: T. Grasser, A. Schenk; Institut für Mikroelektronik, 2013; oral examination: 2013-03-19. [T4] I. Starkov: "Comprehensive Physical Modeling of Hot-Carrier Induced Degradation"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2013; oral examination: 2013-01-14. [T3] R. Huang: "Stress and Microstructural Evolution of Electroplated Copper Films"; Reviewer: T. Grasser, G. Dehm; Institut für Mikroelektronik, 2013; oral examination: 2013-01-09. [T2] L. Filipovic: "Topography Simulation of Novel Processing Techniques"; Reviewer: S. Selberherr, D. Vasileska; Institut für Mikroelektronik, 2012; oral examination: 2012-12-17. [T1] O. Triebl: "Reliability Issues in High-Voltage Semiconductor Devices"; Reviewer: T. Grasser, M. Gröschl; Institut für Mikroelektronik, 2012; oral examination: 2011-10-24. Master's Theses [D2] S. Wolf: "Monte Carlo Ray Tracing for Thermal Transport Simulation"; Supervisor: H. Kosina, Z. Stanojevic; Institut für Mikroelektronik, 2013. [D1] M. Braitner: "Development and Verification of Models for Quantitative EMV Simulations of High-Power MOSFETs"; Supervisor: T. Grasser, P.-J. Wagner; Institut für Mikroelektronik, 2012. Bachelor's Theses [B2] M. Weissbacher: "Investigations of Silicon Dioxide"; Supervisor: E. Langer, W. Gös; Institut für Mikroelektronik, 2013. [B1] M. Stipsitz: "Solution of the One-Dimensional Wave Equation"; Supervisor: E. Langer; Institut für Mikroelektronik, 2012.
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