List of Tables

• 2.1. Definitions for important wavelength nodes in lithography
• 2.2. Examples for typical lens configurations for deep sub micron technology nodes
• 2.3. Overview over the three different parameter classes
• 3.1. Examples for current level of details in the description of semiconductor process steps
• 4.1. Example of mask generation instruction table including biasing and CD (critical dimension) information
• 5.1. Parameters for threshold measurement routine
• 6.1. Maximum allowable temperature ramp rates for vertical 8'' furnaces
• 6.2. Extracted capacitances within the EEPROM memory cell
• 6.3. Parameters of electrical and thermal conductivity for materials used in the polysilicon fuse structure
• 6.4. Calculated differences of the selected parameters to the nominal implant set (1,1,1) in percent
• B.1. Typical user extensions to CIF
• B.2. GDS II header record types
• B.3. GDS II element record types
• B.4. Contents statements allowed in EDIF.
• B.5. Interface statements allowed in EDIF.