AER active energy region
BJT bipolar junction transistor
BTE Boltzmann transport equation
C-V capacitance-voltage
CCDF complementary cumulative distribution function
CET capture/emission time
CMOS complementary MOS
CP charge pumping
cv constant voltage
cc constant current
MOSFET metal-oxide-semiconductor field-effect transistor
FinFET multi-gate field-effect transistor
pMOSFET p-channel MOSFET
nMOSFET n-channel MOSFET
FET field-effect transistor
IGBT insulated-gate bipolar transistor
BTI bias temperature instability
NBTI negative bias temperature instability
PBTI positive bias temperature instability
HCD hot-carrier degradation
HC hot-carrier
HCI hot-carrier injection
OTF on-the-fly
MSM measure-stress-measure
eMSM extended measure-stress-measure
TDDS time-dependent defect spectroscopy
RTN random telegraph noise
SRH Shockley-Read-Hall
SILC stress induced leakage current
TDDB time-dependenc dielectric breakdown
NMP non-radiative-multiphonon
PDF probability density function
DFT density-functional-theory
II impact ionization