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5. Modeling of Electrolytic Interfaces

Bergveld [188] introduced

the first ion sensitive field-effect transistor. Since then the field of applications has developed to a versatile and fascinating area. In the sequel the basic properties of this kind of devices are discussed.

Subsections

5.1 Electrochemistry of Ionic Soultions
5.2 Charge Transport in Electrolytes
- 5.2.1 Bulk Transport
- 5.2.2 Interface Transport
5.3 Double Layer
5.4 Stern Modification
5.5 Ionic Activity
5.6 Site-Binding Model
5.7 Potential of an ISFET Gate Stack
5.8 The ISFET as a Sensor

Next: 5.1 Electrochemistry of Ionic Up: Dissertation T. Windbacher Previous: 4.4 Effective Mass of

T. Windbacher: Engineering Gate Stacks for Field-Effect Transistors