Publications Philipp Paul Hehenberger
25 recordsPublications in Scientific Journals
5. | Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, Ph. J., Hehenberger, P. P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T. Y., Groeseneken, G. (2011). On the Impact of the Si Passivation Layer Thickness on the NBTI of Nanoscaled Si0.45Ge0.55 pMOSFETs. Microelectronic Engineering, 88(7), 1388–1391. https://doi.org/10.1016/j.mee.2011.03.065 (reposiTUm) | |
4. | Grasser, T., Kaczer, B., Gös, W., Reisinger, H., Aichinger, T., Hehenberger, P. P., Wagner, P.-J., Schanovsky, F., Franco, J., Toledano-Luque, M., Nelhiebel, M. (2011). The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps. IEEE Transactions on Electron Devices, 58(11), 3652–3666. https://doi.org/10.1109/ted.2011.2164543 (reposiTUm) | |
3. | Hehenberger, Ph., Wagner, P.-J., Reisinger, H., Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. Microelectronics Reliability, 49(9–11), 1013–1017. https://doi.org/10.1016/j.microrel.2009.06.040 (reposiTUm) | |
2. | Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P. P., Nelhiebel, M. (2009). Understanding Negative Bias Temperature Instability in the Context of Hole Trapping. Microelectronic Engineering, 86(7–9), 1876–1882. (reposiTUm) | |
1. | Grasser, T., Wagner, P.-Jü., Hehenberger, P., Goes, W., Kaczer, B. (2008). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. IEEE Transactions on Device and Materials Reliability, 8(3), 526–535. https://doi.org/10.1109/tdmr.2008.2002353 (reposiTUm) | |
Contributions to Books
1. | Goes, W., Schanovsky, F., Hehenberger, P., Wagner, P.-J., Grasser, T. (2010). (Invited) Charge Trapping and the Negative Bias Temperature Instability. In ECS Transactions (pp. 565–589). ECS Transactions. https://doi.org/10.1149/1.3481647 (reposiTUm) | |
Talks and Poster Presentations (with Proceedings-Entry)
13. | T. Pumhössel, H. Ecker, P. Hehenberger, K. Zeman: "Controlled modal energy transfer in torsional systems using impulsive parametric excitation"; Talk: 9th IFToMM International Conference on Rotor Dynamics, Mailand; 2014-09-22 - 2014-09-25; in: "Proceedings 9th IFToMM International Conference on Rotor Dynamics", (2014), Paper ID MIQ9Z4, 10 pages. | |
12. | Hehenberger, P., Goes, W., Baumgartner, O., Franco, J., Kaczer, B., Grasser, T. (2011). Quantum-Mechanical Modeling of NBTI in High-K SiGe MOSFETs. In 2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan. https://doi.org/10.1109/sispad.2011.6035036 (reposiTUm) | |
11. | Gös, W., Schanovsky, F., Hehenberger, P., Wagner, P., Grasser, T. (2010). Charge Trapping and the Negative Bias Temperature Instability. In Meet. Abstr. - Electrochem. Soc. 2010 (p. 565), Las Vegas, USA. (reposiTUm) | |
10. | Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Roussel, P., Nelhiebel, M. (2010). Recent Advances in Understanding the Bias Temperature Instability. In 2010 International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2010.5703295 (reposiTUm) | |
9. | Hehenberger, P., Reisinger, H., Grasser, T. (2010). Recovery of Negative and Positive Bias Temperature Stress in pMOSFETs. In 2010 IEEE International Integrated Reliability Workshop Final Report, California. https://doi.org/10.1109/iirw.2010.5706473 (reposiTUm) | |
8. | Grasser, T., Kaczer, B., Gös, W., Aichinger, T., Hehenberger, P., Nelhiebel, M. (2009). A Two-Stage Model for Negative Bias Temperature Instability. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 33–44), Phoenix. (reposiTUm) | |
7. | Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009). Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation. In Proceedings of the European Solid-State Device Research Conference (ESSDERC) (pp. 311–314), Montreux, Austria. (reposiTUm) | |
6. | Hehenberger, P., Aichinger, T., Grasser, T., Gös, W., Triebl, O., Kaczer, B., Nelhiebel, M. (2009). Do NBTI-Induced Interface States Show Fast Recovery? A Study Using a Corrected On-The-Fly Charge-Pumping Measurement Technique. In Proceedings of the IEEE International Reliability Physics Symposium (IRPS) (pp. 1033–1038), Phoenix. (reposiTUm) | |
5. | Hehenberger, P., Wagner, P., Reisinger, H., Grasser, T. (2009). On the Temperature and Voltage Dependence of Short-Term Negative Bias Temperature Stress. In Proceedings of the 20th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (p. 4), Maastricht. (reposiTUm) | |
4. | Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P., Nelhiebel, M., Franco, J., Kaczer, B. (2009). Switching Oxide Traps as the Missing Link Between Negative Bias Temperature Instability and Random Telegraph Noise. In 2009 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA. https://doi.org/10.1109/iedm.2009.5424235 (reposiTUm) | |
3. | Goes, W., Karner, M., Tyaginov, S., Hehenberger, P., Grasser, T. (2008). Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping. In 2008 International Conference on Simulation of Semiconductor Processes and Devices, Kanagawa, Japan. https://doi.org/10.1109/sispad.2008.4648239 (reposiTUm) | |
2. | Grasser, T., Wagner, P., Hehenberger, P., Gös, W., Kaczer, B. (2007). A Rigorous Study of Measurement Techniques for Negative Bias Temperature Instability. In Final Report of the IEEE International Integrated Reliability Workshop (IIRW) (pp. 6–11), S. Lake Tahoe. (reposiTUm) | |
1. | Grasser, T., Kaczer, B., Hehenberger, P., Gös, W., Connor, R., Reisinger, H., Gustin, W., Schlünder, C. (2007). Simultaneous Extraction of Recoverable and Permanent Components Contributing to Bias-Temperature Instability. In 2007 IEEE International Electron Devices Meeting, San Francisco, CA, USA. https://doi.org/10.1109/iedm.2007.4419069 (reposiTUm) | |
Talks and Poster Presentations (without Proceedings-Entry)
2. | Hehenberger, P. (2006). Hot Carrier Stability of Trench Power MOSFETs Under Avalanche Conditions. Fachvortrag, Infineon Technologies Austria AG, Villach, Austria. (reposiTUm) | |
1. | Sieberer, M., Michor, H., Della Mea, M., Hehenberger, P., HofstŠtter, C., Lackner, R., Bauer, E., Hilscher, G., Grytsiv, A., Rogl, P. F. (2004). The Effect of Doping Upon Superconductivity in La₃Ni₂B₂N₃. 19. Workshop on strongly correlated systems and superconductivity, Planneralm, Austria. (reposiTUm) | |
Doctor's Theses (authored and supervised)
1. | Hehenberger, P. P. (2011). Advanced Characterization of the Bias Temperature Instability Technische Universität Wien. https://doi.org/10.34726/hss.2011.24894 (reposiTUm) | |
Diploma and Master Theses (authored and supervised)
1. | P. Hehenberger: "Hot Carrier Stability of Trench Power MOSFETs under Avalanche Conditions"; Supervisor: M. Gröschl; Institut für Allgemeine Physik, 2006; final examination: 2006-11-13. | |
Scientific Reports
2. | Ceric, H., Hehenberger, P. P., Milovanovic, G., Sverdlov, V., Vasicek, M., Selberherr, S. (2009). VISTA Status Report June 2009. (reposiTUm) | |
1. | Grasser, T., Gös, W., Triebl, O., Hehenberger, P. P., Wagner, P.-J., Schwaha, P., Heinzl, R., Holzer, S., Entner, R., Wagner, S., Schanovsky, F. (2007). 3 Year Report 2005-2007. (reposiTUm) | |